HAF2001 MOSFET. Datasheet pdf. Equivalent
Type Designator: HAF2001
Type of Transistor: FET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: TO220AB
HAF2001 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HAF2001 Datasheet (PDF)
8.1. haf2007l haf2007s.pdf 
Size:106K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.1. haf2011l haf2011s.pdf Size:129K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.2. haf2012l haf2012s.pdf Size:229K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: H5N5004PL , H5N5005PL , H7N0302LS , HAF1001 , HAF1002 , HAF1003 , HAF1004 , HAF1005 , BUK455-200A , HAF2002 , HAF2005 , HAF2007 , HAF2008 , HAF2011 , HAF2012 , HAT1031T , HAT1033T .
