Справочник MOSFET. AON1611

 

AON1611 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON1611
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 0.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 93 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm
   Тип корпуса: DFN1.6X1.6A

 Аналог (замена) для AON1611

 

 

AON1611 Datasheet (PDF)

 ..1. Size:220K  aosemi
 aon1611.pdf

AON1611 AON1611

AON161120V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON1611 combines advanced trench MOSFET -20Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

 8.1. Size:231K  aosemi
 aon1610.pdf

AON1611 AON1611

AON161020V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1610 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)

 9.1. Size:217K  aosemi
 aon1634.pdf

AON1611 AON1611

AON163430V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1634 combines advanced trench MOSFET 30Vtechnology with a low resistance package to provide ID (at VGS=10V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V)

 9.2. Size:236K  aosemi
 aon1620.pdf

AON1611 AON1611

AON162012V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1620 combines advanced trench MOSFET 12Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)

 9.3. Size:236K  aosemi
 aon1606.pdf

AON1611 AON1611

AON160620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON1606 utilize advanced trench MOSFETtechnology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=4.5V) 0.7Aideal for load switch applications. RDS(ON) (at VGS =4.5V)

 9.4. Size:264K  aosemi
 aon1605.pdf

AON1611 AON1611

AON160520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON1605 utilize advanced trench MOSFETtechnology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=-4.5V) -0.7Aideal for load switch applications. RDS(ON) (at VGS =-4.5V)

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