All MOSFET. AON1611 Datasheet

 

AON1611 MOSFET. Datasheet pdf. Equivalent

Type Designator: AON1611

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.8 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 0.9 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 33 nS

Drain-Source Capacitance (Cd): 93 pF

Maximum Drain-Source On-State Resistance (Rds): 0.058 Ohm

Package: DFN1.6x1.6A

AON1611 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON1611 Datasheet (PDF)

1.1. aon1611.pdf Size:220K _aosemi

AON1611
AON1611

AON1611 20V P-Channel MOSFET General Description Product Summary VDS The AON1611 combines advanced trench MOSFET -20V technology with a low resistance package to provide ID (at VGS=-4.5V) -4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V) < 58mΩ and battery protection applications. RDS(ON) (at VGS =-2.5V) < 76mΩ RDS(ON) (at VGS =-1.8V) < 9

4.1. aon1610.pdf Size:231K _aosemi

AON1611
AON1611

AON1610 20V N-Channel MOSFET General Description Product Summary VDS The AON1610 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V) < 29mΩ and battery protection applications. RDS(ON) (at VGS =2.5V) < 34mΩ RDS(ON) (at VGS =1.8V) < 44mΩ

 5.1. aon1605.pdf Size:264K _aosemi

AON1611
AON1611

AON1605 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=-4.5V) -0.7A ideal for load switch applications. RDS(ON) (at VGS =-4.5V) < 710mΩ RDS(ON) (at VGS =-2.5V) < 930mΩ RDS(ON) (at VGS =-1.8V) < 1250mΩ Typical ESD protection HBM Class 1C DFN 1

5.2. aon1634.pdf Size:217K _aosemi

AON1611
AON1611

AON1634 30V N-Channel MOSFET General Description Product Summary VDS The AON1634 combines advanced trench MOSFET 30V technology with a low resistance package to provide ID (at VGS=10V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V) < 54mΩ and battery protection applications. RDS(ON) (at VGS =4.5V) < 62mΩ RDS(ON) (at VGS =2.5V) < 82mΩ

 5.3. aon1620.pdf Size:236K _aosemi

AON1611
AON1611

AON1620 12V N-Channel MOSFET General Description Product Summary VDS The AON1620 combines advanced trench MOSFET 12V technology with a low resistance package to provide ID (at VGS=4.5V) 4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V) < 22mΩ and battery protection applications. RDS(ON) (at VGS =2.5V) < 27mΩ RDS(ON) (at VGS =1.8V) < 36mΩ

5.4. aon1606.pdf Size:236K _aosemi

AON1611
AON1611

AON1606 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON1606 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=4.5V) 0.7A ideal for load switch applications. RDS(ON) (at VGS =4.5V) < 275mΩ RDS(ON) (at VGS =2.5V) < 335mΩ RDS(ON) (at VGS =1.8V) < 390mΩ Typical ESD protection HBM Class 1C DFN 1.0x0.6

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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