All MOSFET. AON1611 Datasheet

 

AON1611 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON1611
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: DFN1.6X1.6A

 AON1611 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON1611 Datasheet (PDF)

 ..1. Size:220K  aosemi
 aon1611.pdf

AON1611 AON1611

AON161120V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON1611 combines advanced trench MOSFET -20Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

 8.1. Size:231K  aosemi
 aon1610.pdf

AON1611 AON1611

AON161020V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1610 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)

 9.1. Size:217K  aosemi
 aon1634.pdf

AON1611 AON1611

AON163430V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1634 combines advanced trench MOSFET 30Vtechnology with a low resistance package to provide ID (at VGS=10V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V)

 9.2. Size:236K  aosemi
 aon1620.pdf

AON1611 AON1611

AON162012V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON1620 combines advanced trench MOSFET 12Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)

 9.3. Size:236K  aosemi
 aon1606.pdf

AON1611 AON1611

AON160620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON1606 utilize advanced trench MOSFETtechnology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=4.5V) 0.7Aideal for load switch applications. RDS(ON) (at VGS =4.5V)

 9.4. Size:264K  aosemi
 aon1605.pdf

AON1611 AON1611

AON160520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON1605 utilize advanced trench MOSFETtechnology in small DFN 1.0 x 0.6 package. This device is ID (at VGS=-4.5V) -0.7Aideal for load switch applications. RDS(ON) (at VGS =-4.5V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BUK9Y22-100E

 

 
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