AON6250 - аналоги, параметры транзистора - Справочник транзисторов

AON6250 - Аналоги. Основные параметры

   Наименование производителя: AON6250
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 52 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 213 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0165 Ohm
   Тип корпуса: DFN5X6

Аналог (замена) для AON6250

- подбор ⓘ MOSFET транзистора по параметрам

AON6250 технические параметры

..1. Size:295K 1
aon6250.pdf pdf_icon

AON6250 150V N-Channel MOSFET General Description Product Summary VDS The AON6250 uses trench MOSFET technology that is 150V uniquely optimized to provide the most efficient high ID (at VGS=10V) 52A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

..2. Size:295K aosemi
aon6250.pdf pdf_icon

9.1. Size:334K 1
aon6262e.pdf pdf_icon

AON6262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.2. Size:323K 1
aon6234.pdf pdf_icon

AON6234 40V N-Channel MOSFET General Description Product Summary VDS The AON6234 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high 85A ID (at VGS=10V) frequency switching performance.Power losses are

9.3. Size:318K 1
aon6278.pdf pdf_icon

AON6278 80V N-Channel MOSFET General Description Product Summary VDS The AON6278 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.4. Size:637K 1
aon6236.pdf pdf_icon

AON6236 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 30A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.5. Size:265K 1
aon6298.pdf pdf_icon

AON6298 100V N-Channel MOSFET General Description Product Summary VDS The AON6298 uses trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.6. Size:321K 1
aon6240.pdf pdf_icon

AON6240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.7. Size:334K aosemi
aon6262e.pdf pdf_icon

AON6262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.8. Size:368K aosemi
aon6266.pdf pdf_icon

AON6266 60V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

9.9. Size:260K aosemi
aon6294.pdf pdf_icon

AON6294 100V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)

9.10. Size:287K aosemi
aon6246.pdf pdf_icon

AON6246 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6246 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 80A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.11. Size:263K aosemi
aon6292.pdf pdf_icon

AON6292 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.12. Size:237K aosemi
aon6232a.pdf pdf_icon

AON6232A 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

9.13. Size:248K aosemi
aon6230.pdf pdf_icon

AON6230 40V N-Channel MOSFET General Description Product Summary VDS The AON6230 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.14. Size:364K aosemi
aon6290.pdf pdf_icon

AON6290 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.15. Size:239K aosemi
aon6206.pdf pdf_icon

AON6206 30V N-Channel MOSFET General Description Product Summary VDS The AON6206 uses trench MOSFET technology that is 30V 24A uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance.Power losses are

9.16. Size:327K aosemi
aon6234.pdf pdf_icon

9.17. Size:270K aosemi
aon6282.pdf pdf_icon

AON6282 80V N-Channel MOSFET General Description Product Summary VDS The AON6282 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.18. Size:271K aosemi
aon6284.pdf pdf_icon

AON6284 80V N-Channel MOSFET General Description Product Summary VDS The AON6284 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 78A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.19. Size:303K aosemi
aon6276.pdf pdf_icon

AON6276 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V Trench Power AlphaSGTTM technology Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)

9.20. Size:295K aosemi
aon6224a.pdf pdf_icon

9.21. Size:265K aosemi
aon6248.pdf pdf_icon

AON6248 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6248 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 53A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.22. Size:295K aosemi
aon6280.pdf pdf_icon

AON6280 80V N-Channel MOSFET General Description Product Summary VDS 80V The AON6280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.23. Size:344K aosemi
aon6232.pdf pdf_icon

AON6232 40V N-Channel MOSFET General Description Product Summary VDS The AON6232 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high 85A ID (at VGS=10V) frequency switching performance.Power losses are

9.24. Size:347K aosemi
aon6264e.pdf pdf_icon

9.25. Size:221K aosemi
aon6224.pdf pdf_icon

AON6224 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 34A Low Gate Charge RDS(ON) (at VGS=10V)

9.26. Size:567K aosemi
aon6264c.pdf pdf_icon

AON6264C TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

9.27. Size:287K aosemi
aon6242.pdf pdf_icon

AON6242 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.28. Size:565K aosemi
aon6266e.pdf pdf_icon

AON6266E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

9.29. Size:318K aosemi
aon6278.pdf pdf_icon

9.30. Size:262K aosemi
aon6260.pdf pdf_icon

AON6260 60V N-Channel MOSFET General Description Product Summary VDS The AON6260 uses trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.31. Size:273K aosemi
aon6236.pdf pdf_icon

9.32. Size:265K aosemi
aon6298.pdf pdf_icon

9.33. Size:236K aosemi
aon6210.pdf pdf_icon

AON6210 30V N-Channel MOSFET General Description Product Summary VDS The AON6210 uses trench MOSFET technology that is 30V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Conduction and

9.34. Size:298K aosemi
aon6244.pdf pdf_icon

AON6244 60V N-Channel MOSFET General Description Product Summary VDS 60V The AO6244 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS =10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS =10V)

9.35. Size:285K aosemi
aon6270.pdf pdf_icon

AON6270 75V N-Channel MOSFET General Description Product Summary VDS 75V The AON6270 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.36. Size:324K aosemi
aon6220.pdf pdf_icon

AON6220 TM 100V Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)

9.37. Size:331K aosemi
aon6268.pdf pdf_icon

AON6268 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.38. Size:432K aosemi
aon6284a.pdf pdf_icon

AON6284A TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)

9.39. Size:257K aosemi
aon6204.pdf pdf_icon

AON6204 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6204 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.40. Size:311K aosemi
aon6200.pdf pdf_icon

AON6200 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance. Conduction and RDS(ON) (at VGS=10V)

9.41. Size:330K aosemi
aon6226.pdf pdf_icon

AON6226 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.42. Size:236K aosemi
aon6202.pdf pdf_icon

AON6202 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.43. Size:321K aosemi
aon6240.pdf pdf_icon

9.44. Size:1038K cn vbsemi
aon6246.pdf pdf_icon

AON6246 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.006 at VGS = 10 V 80 Material categorization 60 0.007 at VGS = 4.5 V 65 D DFN5X6 Top View Top View Bottom View 1 8 2 7 G 3 6 4 5 PIN1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25

Другие MOSFET... AON6232 , AON6234 , AON6236 , AON6240 , AON6242 , AON6244 , AON6246 , AON6248 , IRF1404 , AON6260 , AON6266 , AON6270 , AON6278 , AON6280 , AON6282 , AON6284 , AON6290 .