# AON6250 MOSFET. Datasheet pdf. Equivalent

Type Designator: AON6250

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 104 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.4 V

Maximum Drain Current |Id|: 52 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 3 nS

Drain-Source Capacitance (Cd): 213 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0165 Ohm

Package: DFN5x6

AON6250 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

## AON6250 Datasheet (PDF)

1.1. aon6250.pdf Size:295K _aosemi

AON6250 150V N-Channel MOSFET General Description Product Summary VDS The AON6250 uses trench MOSFET technology that is 150V uniquely optimized to provide the most efficient high ID (at VGS=10V) 52A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 16.5mΩ switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 19mΩ extremely low combinati

5.1. aon6268.pdf Size:331K _aosemi

AON6268 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 4.7mΩ RDS(ON) (at VGS=4.5V) < 6.3mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification for AC-DC Quick Charger D DFN5x6 Top View Top View Bottom View

5.2. aon6234.pdf Size:327K _aosemi

AON6234 40V N-Channel MOSFET General Description Product Summary VDS The AON6234 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high 85A ID (at VGS=10V) frequency switching performance.Power losses are < 3.4mΩ RDS(ON) (at VGS=10V) minimized due to an extremely low combination of < 5.0mΩ RDS(ON) (at VGS = 4.5V) RDS(ON) and Crss.I

5.3. aon6244.pdf Size:298K _aosemi

AON6244 60V N-Channel MOSFET General Description Product Summary VDS 60V The AO6244 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS =10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS =10V) < 4.7mΩ minimized due to an extremely low combination of RDS(ON) (at VGS =4.5V) < 6.2mΩ RDS(ON) and Crss.In ad

5.4. aon6294.pdf Size:260K _aosemi

AON6294 100V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS MV) technology 100V • Very Low RDS(ON) ID (at VGS=10V) 52A • Low Gate Charge RDS(ON) (at VGS=10V) < 10mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=6V) < 14mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested •

5.5. aon6232a.pdf Size:237K _aosemi

AON6232A 40V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 40V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.9mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=4.5V) < 4.2mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters

5.6. aon6278.pdf Size:318K _aosemi

AON6278 80V N-Channel MOSFET General Description Product Summary VDS The AON6278 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 3.3mΩ switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 4.6mΩ extremely low combination

5.7. aon6242.pdf Size:287K _aosemi

AON6242 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 3.6mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 4.5mΩ RDS(ON) and Crss.In add

5.8. aon6264e.pdf Size:347K _aosemi

AON6264E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 9.5mΩ • ESD protected RDS(ON) (at VGS=4.5V) < 13.3mΩ Typical ESD protection HBM Class 2 Applications 100% UIS Tested 100% Rg Tested • High efficiency power supply

5.9. aon6230.pdf Size:248K _aosemi

AON6230 40V N-Channel MOSFET General Description Product Summary VDS The AON6230 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 1.44mΩ switching power losses are minimized due to an RDS(ON) (at VGS=4.5V) < 2.1mΩ extremely low combinat

5.10. aon6260.pdf Size:262K _aosemi

AON6260 60V N-Channel MOSFET General Description Product Summary VDS The AON6260 uses trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 2.4mΩ switching power losses are minimized due to an RDS(ON) (at VGS=4.5V) < 3.5mΩ extremely low combinati

5.11. aon6292.pdf Size:263K _aosemi

AON6292 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 6mΩ switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 8.5mΩ extremely low combinatio

5.12. aon6290.pdf Size:364K _aosemi

AON6290 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 4.6mW switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 6.2mW extremely low combination o

5.13. aon6200.pdf Size:311K _aosemi

AON6200 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance. Conduction and RDS(ON) (at VGS=10V) < 7.8mΩ switching losses are minimized due to an extremely low RDS(ON) (at VGS = 4.5V) < 11mΩ combination of RD

5.14. aon6226.pdf Size:330K _aosemi

AON6226 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 7.9mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) < 10.2mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification for AC/DC Quick Charger

5.15. aon6236.pdf Size:273K _aosemi

AON6236 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 30A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 7mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 10.5mΩ RDS(ON) and Crss.In add

5.16. aon6282.pdf Size:270K _aosemi

AON6282 80V N-Channel MOSFET General Description Product Summary VDS The AON6282 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 5.6mΩ switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 8.0mΩ extremely low combination

5.17. aon6248.pdf Size:265K _aosemi

AON6248 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6248 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 53A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 11.5mΩ switching power losses are minimized due to an RDS(ON) (at VGS=4.5V) < 14.7mΩ extremely low combin

5.18. aon6270.pdf Size:285K _aosemi

AON6270 75V N-Channel MOSFET General Description Product Summary VDS 75V The AON6270 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 3.9mΩ switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 5.0mΩ extremely low combinatio

5.19. aon6224.pdf Size:221K _aosemi

AON6224 100V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 100V • Low RDS(ON) ID (at VGS=10V) 34A • Low Gate Charge RDS(ON) (at VGS=10V) < 12mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=4.5V) < 15.5mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Conver

5.20. aon6220.pdf Size:324K _aosemi

AON6220 TM 100V Channel AlphaSGT General Description Product Summary VDS 100V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A • Low RDS(ON) • Logic Driven RDS(ON) (at VGS=10V) < 6.2mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) < 7.4mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification for Quick Charger 3.0 • Syn

5.21. aon6284.pdf Size:271K _aosemi

AON6284 80V N-Channel MOSFET General Description Product Summary VDS The AON6284 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 78A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 7.1mΩ switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 10mΩ extremely low combination

5.22. aon6206.pdf Size:239K _aosemi

AON6206 30V N-Channel MOSFET General Description Product Summary VDS The AON6206 uses trench MOSFET technology that is 30V 24A uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance.Power losses are < 6.5mΩ RDS(ON) (at VGS=10V) minimized due to an extremely low combination of RDS(ON) < 9mΩ RDS(ON) (at VGS = 4.5V) and Crss.In a

5.23. aon6246.pdf Size:287K _aosemi

AON6246 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON6246 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 80A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 6.4mΩ minimized due to an extremely low combination of RDS(ON) RDS(ON) (at VGS = 4.5V) < 8mΩ and Crss.In addi

5.24. aon6202.pdf Size:236K _aosemi

AON6202 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 5.5mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 7.5mΩ RDS(ON) and Crss.In ad

5.25. aon6276.pdf Size:303K _aosemi

AON6276 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V • Trench Power AlphaSGTTM technology • Low RDS(ON) ID (at VGS=10V) 100A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.6mΩ • Low Eoss RDS(ON) (at VGS=6V) < 3.5mΩ Applications 100% UIS Tested 100% Rg Tested • Secondary Synchronous Rectification MOSFET for Server and Telecom D DFN5x6

5.26. aon6204.pdf Size:257K _aosemi

AON6204 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6204 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 12mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 18mΩ RDS(ON) and Crss.In addi

5.27. aon6210.pdf Size:236K _aosemi

AON6210 30V N-Channel MOSFET General Description Product Summary VDS The AON6210 uses trench MOSFET technology that is 30V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Conduction and < 1.8mΩ RDS(ON) (at VGS=10V) switching losses are minimized due to an extremely low < 2.5mΩ RDS(ON) (at VGS = 4.5V) combination of

5.28. aon6232.pdf Size:344K _aosemi

AON6232 40V N-Channel MOSFET General Description Product Summary VDS The AON6232 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high 85A ID (at VGS=10V) frequency switching performance.Power losses are < 2.5mΩ RDS(ON) (at VGS=10V) minimized due to an extremely low combination of < 3.6mΩ RDS(ON) (at VGS = 4.5V) RDS(ON) and Crss.I

5.29. aon6240.pdf Size:321K _aosemi

AON6240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 1.6mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 2.4mΩ RDS(ON) and Crss.In ad

5.30. aon6280.pdf Size:295K _aosemi

AON6280 80V N-Channel MOSFET General Description Product Summary VDS 80V The AON6280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 4.1mΩ switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 5.0mΩ extremely low combinatio

5.31. aon6266.pdf Size:368K _aosemi

AON6266 60V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS MV) technology 60V • Low RDS(ON) ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 15mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=4.5V) < 19mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Con

5.32. aon6224a.pdf Size:295K _aosemi

AON6224A TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A • Low RDS(ON) • Logicl Level Driving RDS(ON) (at VGS=10V) < 11.6mΩ • Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=4.5V) < 15.1mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested

5.33. aon6262e.pdf Size:334K _aosemi

AON6262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 6.2mΩ • ESD protected RDS(ON) (at VGS=4.5V) < 8.5mΩ Typical ESD protection HBM Class 2 Applications 100% UIS Tested 100% Rg Tested • High efficiency power supply •

5.34. aon6298.pdf Size:265K _aosemi

AON6298 100V N-Channel MOSFET General Description Product Summary VDS The AON6298 uses trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 16.5mΩ switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 21mΩ extremely low combinati

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