Справочник MOSFET. AOT1606L

 

AOT1606L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOT1606L
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 417 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.7 V
   Максимально допустимый постоянный ток стока |Id|: 178 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 85 nC
   Время нарастания (tr): 31 ns
   Выходная емкость (Cd): 872 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0063 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для AOT1606L

 

 

AOT1606L Datasheet (PDF)

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AOT1606L
AOT1606L

AOT1606L/AOB1606L60V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS60VThe AOT1606L/AOB1606L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 178Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 ..2. Size:260K  inchange semiconductor
aot1606l.pdf

AOT1606L
AOT1606L

isc N-Channel MOSFET Transistor AOT1606LFEATURESDrain Current I = 178A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:415K  aosemi
aot1608l.pdf

AOT1606L
AOT1606L

AOT1608L/AOB1608L60V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS60VThe AOT1608L/AOB1608L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 140Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 8.2. Size:260K  inchange semiconductor
aot1608l.pdf

AOT1606L
AOT1606L

isc N-Channel MOSFET Transistor AOT1608LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:160K  aosemi
aot16n50.pdf

AOT1606L
AOT1606L

AOT16N50/AOTF16N50500V, 16A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT16N50 & AOTF16N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 16Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.2. Size:261K  inchange semiconductor
aot16n50.pdf

AOT1606L
AOT1606L

isc N-Channel MOSFET Transistor AOT16N50FEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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