Справочник MOSFET. AOT410L

 

AOT410L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOT410L

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 333 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 25 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 150 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 107 nC

Время нарастания (tr): 22 ns

Выходная емкость (Cd): 594 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0065 Ohm

Тип корпуса: TO-220

Аналог (замена) для AOT410L

 

 

AOT410L Datasheet (PDF)

1.1. aot410l.pdf Size:344K _aosemi

AOT410L
AOT410L

AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150A gate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) with controlled switching behavior. This universal RDS(ON)

5.1. aot416.pdf Size:199K _aosemi

AOT410L
AOT410L

AOT416 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOT416 is fabricated with SDMOSTM trench ID (at VGS=10V) 42A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 37mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 7V) < 43mΩ

5.2. aot412.pdf Size:313K _aosemi

AOT410L
AOT410L

AOT412/AOB412L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT412 & AOB412L are fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with ID (at VGS=10V) 60A low gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V) < 15.8mΩ efficiency with controlled switching behavior. This RDS(ON) (at VGS = 7V) < 19.4m

 5.3. aot414.pdf Size:325K _aosemi

AOT410L
AOT410L

AOT414 100V N-channel MOSFET General Description Product Summary VDS 100V The AOT414 is fabricated with SDMOSTM trench ID (at VGS=10V) 43A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 25mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 7V) < 31mΩ suited for

5.4. aot418l.pdf Size:296K _aosemi

AOT410L
AOT410L

AOT418L/AOB418L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT418L/AOB418L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D < 10mΩ gate charge and low Qrr.The result is outstanding RDS(ON) (at VGS=10V) efficiency with controlled switching behavior. This < 12mΩ RDS(ON) (at VGS = 7

Другие MOSFET... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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Обновления

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

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