AOT410L - описание и поиск аналогов

AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with ID (at VGS=10V) 150A low gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V)

AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150A gate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOT410L FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

AOT416 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOT416 is fabricated with SDMOSTM trench ID (at VGS=10V) 42A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

AOT414 100V N-channel MOSFET General Description Product Summary VDS 100V The AOT414 is fabricated with SDMOSTM trench ID (at VGS=10V) 43A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

AOT418L/AOB418L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT418L/AOB418L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D

isc N-Channel MOSFET Transistor AOT412 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 15.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

isc N-Channel MOSFET Transistor AOT416 FEATURES Drain Current I = 42A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 37m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera

isc N-Channel MOSFET Transistor AOT414 FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera

isc N-Channel MOSFET Transistor AOT418L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene