Справочник MOSFET. AOT410L

 

AOT410L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOT410L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 333 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 150 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 107 nC
   trⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 594 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для AOT410L

 

 

AOT410L Datasheet (PDF)

 ..1. Size:344K  aosemi
 aot410l.pdf

AOT410L AOT410L

AOT410L/AOB410L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT410L/AOB410L is fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150Agate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

 ..2. Size:244K  inchange semiconductor
 aot410l.pdf

AOT410L AOT410L

isc N-Channel MOSFET Transistor AOT410LFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

 9.1. Size:313K  aosemi
 aot412.pdf

AOT410L AOT410L

AOT412/AOB412L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT412 & AOB412L are fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with ID (at VGS=10V) 60Alow gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V)

 9.2. Size:199K  aosemi
 aot416.pdf

AOT410L AOT410L

AOT416100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOT416 is fabricated with SDMOSTM trench ID (at VGS=10V) 42Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.3. Size:313K  aosemi
 aot412 aob412l.pdf

AOT410L AOT410L

AOT412/AOB412L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT412 & AOB412L are fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with ID (at VGS=10V) 60Alow gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V)

 9.4. Size:325K  aosemi
 aot414.pdf

AOT410L AOT410L

AOT414100V N-channel MOSFETGeneral Description Product SummaryVDS100VThe AOT414 is fabricated with SDMOSTM trench ID (at VGS=10V) 43Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.5. Size:296K  aosemi
 aot418l.pdf

AOT410L AOT410L

AOT418L/AOB418L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT418L/AOB418L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D

 9.6. Size:238K  inchange semiconductor
 aot412.pdf

AOT410L AOT410L

isc N-Channel MOSFET Transistor AOT412FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 15.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 9.7. Size:245K  inchange semiconductor
 aot416.pdf

AOT410L AOT410L

isc N-Channel MOSFET Transistor AOT416FEATURESDrain Current I = 42A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

 9.8. Size:244K  inchange semiconductor
 aot414.pdf

AOT410L AOT410L

isc N-Channel MOSFET Transistor AOT414FEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

 9.9. Size:245K  inchange semiconductor
 aot418l.pdf

AOT410L AOT410L

isc N-Channel MOSFET Transistor AOT418LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

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