Справочник MOSFET. AOT410L

 

AOT410L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOT410L

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 333 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 25 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 150 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 107 nC

Время нарастания (tr): 22 ns

Выходная емкость (Cd): 594 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0065 Ohm

Тип корпуса: TO-220

Аналог (замена) для AOT410L

 

 

AOT410L Datasheet (PDF)

1.1. aot410l.pdf Size:344K _aosemi

AOT410L
AOT410L

AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150A gate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) with controlled switching behavior. This universal RDS(ON)

5.1. aot414.pdf Size:259K _inchange_semiconductor

AOT410L
AOT410L

isc N-Channel MOSFET Transistor AOT414 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

5.2. aot416.pdf Size:199K _aosemi

AOT410L
AOT410L

AOT416 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOT416 is fabricated with SDMOSTM trench ID (at VGS=10V) 42A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 37mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 7V) < 43mΩ

 5.3. aot412.pdf Size:313K _aosemi

AOT410L
AOT410L

AOT412/AOB412L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT412 & AOB412L are fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with ID (at VGS=10V) 60A low gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V) < 15.8mΩ efficiency with controlled switching behavior. This RDS(ON) (at VGS = 7V) < 19.4m

5.4. aot418l.pdf Size:296K _aosemi

AOT410L
AOT410L

AOT418L/AOB418L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT418L/AOB418L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D < 10mΩ gate charge and low Qrr.The result is outstanding RDS(ON) (at VGS=10V) efficiency with controlled switching behavior. This < 12mΩ RDS(ON) (at VGS = 7

 5.5. aot414.pdf Size:325K _aosemi

AOT410L
AOT410L

AOT414 100V N-channel MOSFET General Description Product Summary VDS 100V The AOT414 is fabricated with SDMOSTM trench ID (at VGS=10V) 43A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 25mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 7V) < 31mΩ suited for

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