AOT410L MOSFET PDF: N-Ch, 100V, 150A. Full specification with pinout and replacement list

AOT410L PDF Specs and Replacement

   Type Designator: AOT410L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 594 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220

AOT410L substitution

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AOT410L PDF Specs

..1. Size:344K aosemi
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AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150A gate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) ... See More ⇒

..2. Size:244K inchange semiconductor
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isc N-Channel MOSFET Transistor AOT410L FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen... See More ⇒

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9.2. Size:199K aosemi
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AOT416 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOT416 is fabricated with SDMOSTM trench ID (at VGS=10V) 42A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) ... See More ⇒