AOW15S60 - описание и поиск аналогов

AOW15S60/AOWF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW15S60 & AOWF15S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 63A designed to deliver high levels of performance and RDS(ON),max 0.29 robustness in switching applications. Qg,typ 16nC By providing low RDS(on), Qg an

isc N-Channel MOSFET Transistor AOW15S60 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

AOW15S65/AOWF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW15S65 & AOWF15S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 60A designed to deliver high levels of performance and RDS(ON),max 0.29 robustness in switching applications. Qg,typ 17.2nC By providing low RDS(on), Qg

AOW15S65/AOWF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW15S65 & AOWF15S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 60A designed to deliver high levels of performance and RDS(ON),max 0.29 robustness in switching applications. Qg,typ 17.2nC By providing low RDS(on), Qg

isc N-Channel MOSFET Transistor AOW15S65 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp