Справочник MOSFET. FDMS3622S

 

FDMS3622S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDMS3622S
   Маркировка: 08OD09OD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 26 nC
   trⓘ - Время нарастания: 2 ns
   Cossⓘ - Выходная емкость: 448 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: PQFN5X6
     - подбор MOSFET транзистора по параметрам

 

FDMS3622S Datasheet (PDF)

 ..1. Size:397K  fairchild semi
fdms3622s.pdfpdf_icon

FDMS3622S

December 2011FDMS3622SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

 ..2. Size:456K  onsemi
fdms3622s.pdfpdf_icon

FDMS3622S

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:389K  fairchild semi
fdms3624s.pdfpdf_icon

FDMS3622S

December 2011FDMS3624SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

 7.2. Size:388K  fairchild semi
fdms3626s.pdfpdf_icon

FDMS3622S

December 2011FDMS3626SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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