FDMS3622S MOSFET Datasheet: N-Ch, 25V, 17.5A. Full specification with pinout and replacement list

FDMS3622S Specs and Replacement

Type Designator: FDMS3622S

Marking Code: 08OD09OD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 17.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V

Qg ⓘ - Total Gate Charge: 26 nC

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 448 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: PQFN5X6

FDMS3622S substitution

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FDMS3622S datasheet

..1. Size:397K fairchild semi
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December 2011 FDMS3622S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒

..2. Size:456K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

7.1. Size:389K fairchild semi
fdms3624s.pdf pdf_icon

December 2011 FDMS3624S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒

7.2. Size:388K fairchild semi
fdms3626s.pdf pdf_icon

December 2011 FDMS3626S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒