All MOSFET. FDMS3622S Datasheet

 

FDMS3622S Datasheet and Replacement


   Type Designator: FDMS3622S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 17.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 448 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: PQFN5X6
 

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FDMS3622S Datasheet (PDF)

 ..1. Size:397K  fairchild semi
fdms3622s.pdf pdf_icon

FDMS3622S

December 2011FDMS3622SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

 ..2. Size:456K  onsemi
fdms3622s.pdf pdf_icon

FDMS3622S

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:389K  fairchild semi
fdms3624s.pdf pdf_icon

FDMS3622S

December 2011FDMS3624SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

 7.2. Size:388K  fairchild semi
fdms3626s.pdf pdf_icon

FDMS3622S

December 2011FDMS3626SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

Datasheet: FDMC86116LZ , FDB024N08BL7 , FDMS86250 , FDMS86540 , FDMS3626S , FDMC8010 , FDMC8321L , FDMS86520 , AO4407 , FDMS3624S , FDD86113LZ , FDMS8320L , FDMS86500DC , FDMS8558S , FDMS8560S , FDMS8570S , FDMS3660S .

History: KF3N40D | SSP60R280SFD

Keywords - FDMS3622S MOSFET datasheet

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