FDMS8558S Specs and Replacement
Type Designator: FDMS8558S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 1508 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
Package: PQFN5X6
FDMS8558S substitution
- MOSFET ⓘ Cross-Reference Search
FDMS8558S datasheet
fdms8558s.pdf
October 2014 FDMS8558S(PCN) N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ... See More ⇒
fdms8558sdc.pdf
July 2013 FDMS8558SDC N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3... See More ⇒
fdms8560s.pdf
November 2014 FDMS8560S N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 m Features General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 28 A Advancements in both silicon and package technologies have High performance te... See More ⇒
fdms8570sdc.pdf
July 2013 FDMS8570SDC N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 A Advancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2... See More ⇒
Detailed specifications: FDMC8010, FDMC8321L, FDMS86520, FDMS3622S, FDMS3624S, FDD86113LZ, FDMS8320L, FDMS86500DC, IRFP450, FDMS8560S, FDMS8570S, FDMS3660S, FDMS3664S, FDMS3668S, FDMC8588, FCP190N60E, FCP380N60E
Keywords - FDMS8558S MOSFET specs
FDMS8558S cross reference
FDMS8558S equivalent finder
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FDMS8558S substitution
FDMS8558S replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FDZ661PZ | FCP190N60E
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