Справочник MOSFET. FDMS8558S

 

FDMS8558S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDMS8558S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 33 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 1508 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0015 Ohm
   Тип корпуса: PQFN5X6
 

 Аналог (замена) для FDMS8558S

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDMS8558S Datasheet (PDF)

 ..1. Size:325K  fairchild semi
 fdms8558s.pdf pdf_icon

FDMS8558S

October 2014FDMS8558S(PCN)N-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V,

 0.1. Size:405K  fairchild semi
 fdms8558sdc.pdf pdf_icon

FDMS8558S

July 2013FDMS8558SDCN-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3

 8.1. Size:295K  fairchild semi
 fdms8560s.pdf pdf_icon

FDMS8558S

November 2014FDMS8560SN-Channel PowerTrench SyncFETTM25 V, 70 A, 1.8 mFeatures General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 28 AAdvancements in both silicon and package technologies have High performance te

 8.2. Size:397K  fairchild semi
 fdms8570sdc.pdf pdf_icon

FDMS8558S

July 2013FDMS8570SDCN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 AAdvancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FDMC8010 , FDMC8321L , FDMS86520 , FDMS3622S , FDMS3624S , FDD86113LZ , FDMS8320L , FDMS86500DC , IRF1407 , FDMS8560S , FDMS8570S , FDMS3660S , FDMS3664S , FDMS3668S , FDMC8588 , FCP190N60E , FCP380N60E .

History: NCEP60T12T | SQ3987EV | FDMS8320L | NCE6005AS | PSMN2R8-40BS | S80N10S | 4N90L-TF3T-T

 

 
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