FDMS8558S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMS8558S
   Código: 09OD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 81 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 1508 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
   Paquete / Cubierta: PQFN5X6

Búsqueda de reemplazo de MOSFET FDMS8558S

FDMS8558S Datasheet (PDF)

..1. Size:325K fairchild semi
fdms8558s.pdf

October 2014FDMS8558S(PCN)N-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V,

0.1. Size:405K fairchild semi
fdms8558sdc.pdf

July 2013FDMS8558SDCN-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3

8.1. Size:295K fairchild semi
fdms8560s.pdf

November 2014FDMS8560SN-Channel PowerTrench SyncFETTM25 V, 70 A, 1.8 mFeatures General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 28 AAdvancements in both silicon and package technologies have High performance te

8.2. Size:397K fairchild semi
fdms8570sdc.pdf

July 2013FDMS8570SDCN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 AAdvancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2

8.3. Size:290K fairchild semi
fdms8570s.pdf

November 2014FDMS8570SN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 4.5 V, ID = 22 AAdvancements in both silicon and package technologies have High performance te

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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