All MOSFET. FDMS8570S Datasheet

 

FDMS8570S Datasheet and Replacement


   Type Designator: FDMS8570S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 42 nC
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 662 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: PQFN5X6
 

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FDMS8570S Datasheet (PDF)

 ..1. Size:290K  fairchild semi
 fdms8570s.pdf pdf_icon

FDMS8570S

November 2014FDMS8570SN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 4.5 V, ID = 22 AAdvancements in both silicon and package technologies have High performance te

 0.1. Size:397K  fairchild semi
 fdms8570sdc.pdf pdf_icon

FDMS8570S

July 2013FDMS8570SDCN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 AAdvancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2

 8.1. Size:405K  fairchild semi
 fdms8558sdc.pdf pdf_icon

FDMS8570S

July 2013FDMS8558SDCN-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3

 8.2. Size:325K  fairchild semi
 fdms8558s.pdf pdf_icon

FDMS8570S

October 2014FDMS8558S(PCN)N-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V,

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Datasheet: FDMS86520 , FDMS3622S , FDMS3624S , FDD86113LZ , FDMS8320L , FDMS86500DC , FDMS8558S , FDMS8560S , P60NF06 , FDMS3660S , FDMS3664S , FDMS3668S , FDMC8588 , FCP190N60E , FCP380N60E , FCPF190N60E , FCPF380N60E .

History: STH110N10F7-2 | CPC3703C | NVATS5A302PLZ

Keywords - FDMS8570S MOSFET datasheet

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