FDMS8570S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS8570S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 662 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
Encapsulados: PQFN5X6
Búsqueda de reemplazo de FDMS8570S MOSFET
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FDMS8570S datasheet
fdms8570s.pdf
November 2014 FDMS8570S N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 m Features General Description Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 4.5 V, ID = 22 A Advancements in both silicon and package technologies have High performance te
fdms8570sdc.pdf
July 2013 FDMS8570SDC N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 A Advancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2
fdms8558sdc.pdf
July 2013 FDMS8558SDC N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3
fdms8558s.pdf
October 2014 FDMS8558S(PCN) N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V,
Otros transistores... FDMS86520 , FDMS3622S , FDMS3624S , FDD86113LZ , FDMS8320L , FDMS86500DC , FDMS8558S , FDMS8560S , AO4407 , FDMS3660S , FDMS3664S , FDMS3668S , FDMC8588 , FCP190N60E , FCP380N60E , FCPF190N60E , FCPF380N60E .
History: FDP150N10A | FDMS86500DC
History: FDP150N10A | FDMS86500DC
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