FDMS8570S - описание и поиск аналогов

November 2014 FDMS8570S N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 m Features General Description Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 4.5 V, ID = 22 A Advancements in both silicon and package technologies have High performance te

July 2013 FDMS8570SDC N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 A Advancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2

July 2013 FDMS8558SDC N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3

October 2014 FDMS8558S(PCN) N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V,

November 2014 FDMS8560S N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 m Features General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 28 A Advancements in both silicon and package technologies have High performance te