All MOSFET. AO4407 Datasheet

 

AO4407 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AO4407
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 3.1 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 25 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.8 V
   Maximum Drain Current |Id|: 12 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 9.4 nS
   Drain-Source Capacitance (Cd): 370 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
   Package: SO-8

 AO4407 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO4407 Datasheet (PDF)

 ..1. Size:340K  aosemi
ao4407.pdf

AO4407
AO4407

AO440730V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-20V) -12Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V)

 ..2. Size:2315K  kexin
ao4407.pdf

AO4407
AO4407

SMD Type MOSFETP-Channel MOSFETAO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V)1.50 0.15 RDS(ON) 13m (VGS =-20V)D RDS(ON) 14m (VGS =-10V) D1 Source 5 Drain RDS(ON) 30m (VGS =-5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drai

 0.1. Size:332K  aosemi
ao4407c.pdf

AO4407
AO4407

AO4407C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)

 0.2. Size:207K  aosemi
ao4407a.pdf

AO4407
AO4407

AO4407A30V P-Channel MOSFETGeneral Description Product SummaryThe AO4407A uses advanced trench technology to VDS = -30Vprovide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V)with a 25V gate rating. This device is suitable for use as RDS(ON)

 0.3. Size:1643K  kexin
ao4407a.pdf

AO4407
AO4407

SMD Type MOSFETP-Channel MOSFETAO4407A (KO4407A)SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V)1.50 0.15 RDS(ON) 11m (VGS =-20V) RDS(ON) 13m (VGS =-10V)1 Source 5 Drain RDS(ON) 17m (VGS =-6V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

 0.4. Size:830K  cn vbsemi
ao4407a.pdf

AO4407
AO4407

AO4407Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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