AO4407 Datasheet: MOSFET, P-Ch, 30V, 12A. Full specification with pinout and replacement list

AO4407 Datasheet. Specs and Replacement

The AO4407 is a P-channel enhancement-mode MOSFET designed for high-efficiency power switching applications. It features a low on-state resistance, which minimizes conduction losses and improves overall system efficiency. The device supports a drain-to-source voltage rating of up to 30V, making it suitable for load switching, power management, DC-DC converter applications. The AO4407 is optimized for logic-level gate drive, allowing reliable operation with low gate-to-source voltages. It is housed in a compact surface-mount package, providing excellent thermal performance and space savings on printed circuit boards. The MOSFET offers fast switching characteristics, low gate charge, robust reliability for consumer, industrial, automotive electronics.

Type Designator: AO4407 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.4 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SO-8

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AO4407 datasheet

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AO4407 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-20V) -12A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V) ... See More ⇒

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SMD Type MOSFET P-Channel MOSFET AO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 13m (VGS =-20V) D RDS(ON) 14m (VGS =-10V) D 1 Source 5 Drain RDS(ON) 30m (VGS =-5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drai... See More ⇒

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AO4407C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

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ao4407a.pdf pdf_icon

AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to VDS = -30V provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V) with a 25V gate rating. This device is suitable for use as RDS(ON) ... See More ⇒