Аналог (замена) для AO4407

 

 

AO4407 Datasheet (PDF)

1.1. ao4407a.pdf Size:207K _aosemi

AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to VDS = -30V provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V) with a 25V gate rating. This device is suitable for use as RDS(ON) < 11mΩ (VGS = -20V) a load switch or in PWM applications. RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 17mΩ (VGS = -6V)

1.2. ao4407.pdf Size:340K _aosemi

AO4407 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-20V) -12A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V) < 13mΩ and battery protection applications. RDS(ON) (at VGS =-10V) < 14mΩ RDS(ON) (at VGS =-5V) < 30mΩ

 1.3. ao4407a.pdf Size:1643K _kexin

SMD Type MOSFET P-Channel MOSFET AO4407A (KO4407A) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-12 A (VGS =-20V) 1.50 0.15 ● RDS(ON) ＜ 11mΩ (VGS =-20V) ● RDS(ON) ＜ 13mΩ (VGS =-10V) 1 Source 5 Drain ● RDS(ON) ＜ 17mΩ (VGS =-6V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Dr

1.4. ao4407.pdf Size:2315K _kexin

SMD Type MOSFET P-Channel MOSFET AO4407 SOP-8 ■ Features ● VDS (V) =-30V ● ID =-12 A (VGS =-20V) 1.50 0.15 ● RDS(ON) ＜ 13mΩ (VGS =-20V) D ● RDS(ON) ＜ 14mΩ (VGS =-10V) D 1 Source 5 Drain ● RDS(ON) ＜ 30mΩ (VGS =-5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drai

     

 

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Обновления

MOSFET: IPF090N03LG | IPF039N03LG | IPU64CN10NG | IPU105N03LG | WFP75N08 | UTC7N65L | SVF4N60CAMJ | SVF4N60CAMN | SVF4N60CAT | SVF4N60CAD | SVF4N60CAK | SVF4N60CAF | SUB85N03-07P | SUP85N03-07P | STP110N7F6 |