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AO4407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO4407

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.1 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.8 V

Tiempo de elevación (tr): 9.4 nS

Conductancia de drenaje-sustrato (Cd): 370 pF

Resistencia drenaje-fuente RDS(on): 0.014 Ohm

Empaquetado / Estuche: SO-8

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AO4407 Datasheet (PDF)

1.1. ao4407a.pdf Size:207K _aosemi

AO4407
AO4407

AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to VDS = -30V provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V) with a 25V gate rating. This device is suitable for use as RDS(ON) < 11mΩ (VGS = -20V) a load switch or in PWM applications. RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 17mΩ (VGS = -6V)

1.2. ao4407.pdf Size:340K _aosemi

AO4407
AO4407

AO4407 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-20V) -12A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V) < 13mΩ and battery protection applications. RDS(ON) (at VGS =-10V) < 14mΩ RDS(ON) (at VGS =-5V) < 30mΩ

 1.3. ao4407a.pdf Size:1643K _kexin

AO4407
AO4407

SMD Type MOSFET P-Channel MOSFET AO4407A (KO4407A) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-12 A (VGS =-20V) 1.50 0.15 ● RDS(ON) < 11mΩ (VGS =-20V) ● RDS(ON) < 13mΩ (VGS =-10V) 1 Source 5 Drain ● RDS(ON) < 17mΩ (VGS =-6V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Dr

1.4. ao4407.pdf Size:2315K _kexin

AO4407
AO4407

SMD Type MOSFET P-Channel MOSFET AO4407 SOP-8 ■ Features ● VDS (V) =-30V ● ID =-12 A (VGS =-20V) 1.50 0.15 ● RDS(ON) < 13mΩ (VGS =-20V) D ● RDS(ON) < 14mΩ (VGS =-10V) D 1 Source 5 Drain ● RDS(ON) < 30mΩ (VGS =-5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drai

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