AO4407 Datasheet. Equivalente

 ..1. Size:340K  aosemi
 ao4407.pdf

AO4407 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-20V) -12A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V)

 ..2. Size:2315K  kexin
 ao4407.pdf

SMD Type MOSFET P-Channel MOSFET AO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 13m (VGS =-20V) D RDS(ON) 14m (VGS =-10V) D 1 Source 5 Drain RDS(ON) 30m (VGS =-5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drai

 0.1. Size:332K  aosemi
 ao4407c.pdf

AO4407C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)

 0.2. Size:207K  aosemi
 ao4407a.pdf

AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to VDS = -30V provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V) with a 25V gate rating. This device is suitable for use as RDS(ON)

 0.3. Size:1643K  kexin
 ao4407a.pdf

SMD Type MOSFET P-Channel MOSFET AO4407A (KO4407A) SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 11m (VGS =-20V) RDS(ON) 13m (VGS =-10V) 1 Source 5 Drain RDS(ON) 17m (VGS =-6V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr

 0.4. Size:830K  cn vbsemi
 ao4407a.pdf

AO4407A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs