2SK537 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK537
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 70 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 9 Ohm
Тип корпуса: TO220AB
2SK537 Datasheet (PDF)
2sk537.pdf
Free Datasheet http://www.datasheet4u.com/Free Datasheet http://www.datasheet4u.com/Free Datasheet http://www.datasheet4u.com/Free Datasheet http://www.datasheet4u.com/Free Datasheet http://www.datasheet4u.com/Free Datasheet http://www.datasheet4u.com/
2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf
2sk536.pdf
Ordering number:EN2550N-Channel Enhancement MOS Silicon FET2SK536Analog Switch ApplicationsFeatures Package Dimensions Large yfs .unit:mm Enhancement type.2024B Low ON-state resistance.[2SK536]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Drain3 : SourceSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbo
2sk532.pdf
isc N-Channel MOSFET Transistor 2SK532FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.085(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk530.pdf
isc N-Channel MOSFET Transistor 2SK530DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
2sk538.pdf
isc N-Channel MOSFET Transistor 2SK538DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
2sk531.pdf
isc N-Channel MOSFET Transistor 2SK531DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
2sk534.pdf
isc N-Channel MOSFET Transistor 2SK534DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
2sk539.pdf
isc N-Channel MOSFET Transistor 2SK539DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918