2SK537
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK537
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 60
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 1
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 30
ns
Cossⓘ - Выходная емкость: 70
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 9
Ohm
Тип корпуса:
TO220AB
Аналог (замена) для 2SK537
-
подбор ⓘ MOSFET транзистора по параметрам
2SK537
Datasheet (PDF)
..1. Size:201K toshiba
2sk537.pdf 

Free Datasheet http://www.datasheet4u.com/Free Datasheet http://www.datasheet4u.com/Free Datasheet http://www.datasheet4u.com/Free Datasheet http://www.datasheet4u.com/Free Datasheet http://www.datasheet4u.com/Free Datasheet http://www.datasheet4u.com/
9.3. Size:60K sanyo
2sk536.pdf 

Ordering number:EN2550N-Channel Enhancement MOS Silicon FET2SK536Analog Switch ApplicationsFeatures Package Dimensions Large yfs .unit:mm Enhancement type.2024B Low ON-state resistance.[2SK536]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Drain3 : SourceSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbo
9.9. Size:279K inchange semiconductor
2sk532.pdf 

isc N-Channel MOSFET Transistor 2SK532FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.085(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
9.10. Size:227K inchange semiconductor
2sk530.pdf 

isc N-Channel MOSFET Transistor 2SK530DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
9.11. Size:234K inchange semiconductor
2sk538.pdf 

isc N-Channel MOSFET Transistor 2SK538DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
9.12. Size:234K inchange semiconductor
2sk531.pdf 

isc N-Channel MOSFET Transistor 2SK531DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
9.13. Size:236K inchange semiconductor
2sk534.pdf 

isc N-Channel MOSFET Transistor 2SK534DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
9.14. Size:234K inchange semiconductor
2sk539.pdf 

isc N-Channel MOSFET Transistor 2SK539DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
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