SSP7N60B - параметры транзистора MOSFET, его аналоги, datasheet

SSP7N60B Datasheet (PDF)

..1. Size:921K fairchild semi
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SSP7N60B/SSS7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switchi

7.1. Size:581K samsung
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Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.977 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

9.1. Size:862K samsung
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Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Другие MOSFET... FTD04N60A , FTU04N60B , FTD04N60B , FTU04N65C , FTD04N65C , FTU06N70C , FTD06N70C , 2SK1487 , 5N50 , SSS7N60B , SSM40N03P , IRF830B , IRFS830B , CLY2 , 2SK2369 , 2SK2370 , 2SK2357 .