Справочник MOSFET. 2SK614

 

2SK614 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK614
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 30 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4 Ohm
   Тип корпуса: TO92

 Аналог (замена) для 2SK614

 

 

2SK614 Datasheet (PDF)

 ..1. Size:32K  panasonic
 2sk614.pdf

2SK614 2SK614

Silicon MOS FETs (Small Signal) 2SK6142SK614Silicon N-Channel MOSUnit : mmFor switching5.0 0.2 4.0 0.2 Features Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL+0.2 +0.20.45 0.1 0.45 0.11.27 1.27 Absolute Maximum Ratings (Ta = 25C)1 : SourceParameter Symbol Rating Unit2 : Drain3 : GateDrain-Source voltage VDS 80

 9.1. Size:295K  1
 2sk611.pdf

2SK614 2SK614

 9.2. Size:110K  nec
 2sk612-z.pdf

2SK614 2SK614

 9.3. Size:34K  panasonic
 2sk615.pdf

2SK614 2SK614

Silicon MOS FETs (Small Signal) 2SK6152SK615Silicon N-Channel MOSUnit : mmFor switching6.9 0.1 2.5 0.11.5 Features 1.5 R0.9 1.0R0.9 Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL Easy automatic- /manual-insertion due to M type package. Self-fix-0.85ing to printed circuits board.0.55 0.1 0.45 0.053 2 1 Absolute Maximu

 9.4. Size:235K  inchange semiconductor
 2sk616.pdf

2SK614 2SK614

isc N-Channel MOSFET Transistor 2SK616FEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS

 9.5. Size:235K  inchange semiconductor
 2sk617.pdf

2SK614 2SK614

isc N-Channel MOSFET Transistor 2SK617FEATURESDrain Current I =1A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for low voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dri

 9.6. Size:241K  inchange semiconductor
 2sk610.pdf

2SK614 2SK614

isc N-Channel MOSFET Transistor 2SK610FEATURESDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh Voltage.High speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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