Ordering number : ENN66002SK2631N-Channel Silicon MOSFET2SK2631Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance. unit : mm Smaller amount of total gate charge. 2083B[2SK2631]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SK2631]6.5 2.35.0 0

Ordering number:ENN5531BN-Channel Silicon MOSFET2SK2632LSUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Low Qg.2078B[2SK2632LS]4.510.02.83.20.91.21.20.70.751 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO220FI-LSSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditio

N-channel MOS-FET2SK2639-01FAP-IIS Series 450V 0,65 10A 100W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteri

FUJI POWER MOSFET2SK2638-01MRN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic