HUF76633S3S datasheet, подбор замены

 0.1. Size:216K  fairchild semi
 huf76633s3st.pdf 

HUF76633P3, HUF76633S3S Data Sheet December 2001 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance DRAIN SOURCE (FLANGE) - rDS(ON) = 0.035 , VGS = 10V DRAIN GATE - rDS(ON) = 0.036 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El

 6.1. Size:369K  fairchild semi
 huf76633p3 f085.pdf 

HUF76633P3_F085 Data Sheet April 2012 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB Ultra Low On-Resistance - rDS(ON) = 0.035 , VGS = 10V SOURCE DRAIN - rDS(ON) = 0.036 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Model

 6.2. Size:223K  fairchild semi
 huf76633p3-s3s.pdf 

HUF76633P3, HUF76633S3S Data Sheet December 2001 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance DRAIN SOURCE (FLANGE) - rDS(ON) = 0.035 , VGS = 10V DRAIN GATE - rDS(ON) = 0.036 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El

 6.3. Size:843K  cn vbsemi
 huf76633p3.pdf 

HUF76633P3 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C,