SSF1020A. Аналоги и основные параметры
Наименование производителя: SSF1020A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 15.6 ns
Cossⓘ - Выходная емкость: 300 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: D2PAK
Аналог (замена) для SSF1020A
- подборⓘ MOSFET транзистора по параметрам
SSF1020A даташит
..1. Size:453K silikron
ssf1020a.pdf 
SSF1020A Feathers ID =60A Advanced trench process technology BV=100V Ultra low Rdson, typical 16mohm Rdson=20m max. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF1020A is a new generation of middle voltage and high current N Channel enhancement mode trench power SSF1020A TOP View (D2PAK) MOSFET. This ne
7.1. Size:458K silikron
ssf1020.pdf 
SSF1020 Feathers ID =60A Advanced trench process technology BV=100V Ultra low Rdson, typical 16mohm Rdson=16m Typ. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF1020 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology i
7.2. Size:685K silikron
ssf1020d.pdf 
SSF1020D Main Product Characteristics VDSS 100V RDS(on) 16m (typ.) ID 60A DPAK Ma rk in g an d pi n Sc h ema t ic diag r am Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re
9.1. Size:255K fairchild semi
ssf10n60a.pdf 
SSF10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.9 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol
9.2. Size:577K samsung
ssf10n80a.pdf 
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 0.746 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val
9.3. Size:579K samsung
ssf10n90a.pdf 
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 0.938 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu
9.5. Size:851K silikron
ssf1016d.pdf 
SSF1016D Feathers ID =60A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description The SSF1016D is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par
9.6. Size:659K silikron
ssf1009.pdf 
SSF1009 Main Product Characteristics VDSS 100V RDS(on) 7.2mohm(typ.) ID 100A Ma r k ing an d pin Sche ma ti c di agr a m TO220 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec
9.7. Size:826K silikron
ssf1030d.pdf 
SSF1030D Feathers ID =45A Advanced trench process technology BV=100V Ultra low Rdson, typical 23mohm Rdson=23m typ. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF1030D is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increa
9.8. Size:417K silikron
ssf1010.pdf 
SSF1010 Main Product Characteristics VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
9.9. Size:384K silikron
ssf1010a.pdf 
SSF1010A Main Product Characteristics VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
9.10. Size:672K silikron
ssf1006.pdf 
SSF1006 Main Product Characteristics VDSS 100V RDS(on) 4.6m (typ.) ID 200A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
9.11. Size:536K silikron
ssf1030.pdf 
SSF1030 Main Product Characteristics VDSS 100V RDS(on) 20.5m (typ.) ID 45A Mar ki ng a nd p in Sche ma ti c di agr a m TO-220 Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
9.12. Size:716K silikron
ssf1090a.pdf 
SSF1090A Main Product Characteristics VDSS 100V RDS(on) 72m (typ) ID 15A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.13. Size:921K silikron
ssf1006a.pdf 
SSF1006A Feathers ID =200A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=4.7m Typ. Fully characterized avalanche voltage and current Description The SSF1006A is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electri
9.14. Size:544K silikron
ssf1016a.pdf 
SSF1016A Main Product Characteristics VDSS 100V RDS(on) 13.8mohm(typ.) ID 75A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
9.15. Size:731K silikron
ssf1016.pdf 
SSF1016 Feathers ID =75A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description The SSF1016 is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical
9.16. Size:390K silikron
ssf1030b.pdf 
SSF1030B Feathers Advanced trench process technology ID =7A Ultra low Rdson, typical 25mohm BV=100V High avalanche energy, 100% test Rdson=25m typ. Fully characterized avalanche voltage and current Description The SSF1030B is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology
9.17. Size:410K silikron
ssf1007.pdf 
SSF1007 Main Product Characteristics VDSS 100V RDS(on) 5.8mohm Typ ID 130A Features and Benefits SSF1007 TOP View (TO220) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description It utilizes the latest trench
9.19. Size:509K silikron
ssf1090.pdf 
SSF1090 Feathers ID =15A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=0.06 (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The SSF1090 is a new generation of high voltage and low current N Channel en
9.20. Size:464K silikron
ssf1006h.pdf 
SSF1006H Main Product Characteristics VDSS 100V RDS(on) 5m (typ.) ID 200A Marking a nd p in TO-247 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.22. Size:333K silikron
ssf10n90f1.pdf 
SSF10N90F1 Main Product Characteristics V 900V DSS R (on) 0.85 (typ.) DS I 10A D Marking and pin TO-3P Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Low On Resistance Low Gate Charge Fast switching and reverse body recovery Description It utilizes the latest processing techniques to achieve the high cell density a
9.23. Size:436K silikron
ssf1090d.pdf 
SSF1090D Main Product Characteristics VDSS 100V RDS(on) 60m (typ.) ID 15A TO-252 (D-PAK) Marking and pi n Sc he mat ic d ia gram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
Другие IGBT... SSF1007, SSF1009, SSF1010, SSF1010A, SSF1016, SSF1016A, SSF1016D, SSF1020, 5N60, SSF1020D, SSF1030, SSF1030B, SSF1030D, SSF1090, SSF1090A, SSF1090D, SSF10N60
