Справочник MOSFET. SSF2145CH6

 

SSF2145CH6 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF2145CH6
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 1.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.8(2.9) A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 58(75) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055(0.08) Ohm
   Тип корпуса: TSOP6
     - подбор MOSFET транзистора по параметрам

 

SSF2145CH6 Datasheet (PDF)

 ..1. Size:280K  silikron
 ssf2145ch6.pdf pdf_icon

SSF2145CH6

SSF2145CH6 Main Product Characteristics: n-ch p-ch VDSS 20V -20V RDSon(typ.) 38mohm 64mohm Marking and pin TSOP-6 Schematic diagram ID 4.8A 2.9A Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for load switching and buttery protection applications 150 operating temperature Description: It utilizes the l

 9.1. Size:347K  silikron
 ssf2116ej3.pdf pdf_icon

SSF2145CH6

SSF2116EJ3 Main Product Characteristics: VDSS 20V RDS(on) 14.5mohmtyp.ID 8.5A DFN2X5-6L-EP Marking and pin Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 9.2. Size:545K  silikron
 ssf2129h3.pdf pdf_icon

SSF2145CH6

SSF2129H3 Main Product Characteristics: VDSS -20V D1D2G1 G2 RDS(on) 21m (typ.) S1 S2ID -6.0A Marking and pin SOP-8 S che matic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

 9.3. Size:542K  silikron
 ssf2122e.pdf pdf_icon

SSF2145CH6

SSF2122E Main Product Characteristics: VDSS 20V RDS(on) 15.2mohm(typ.) ID 7A DFN 3x3-8L Marking and pin Schematic diagram A ss ignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDMS2504SDC | WMJ38N60C2 | IRLZ44NPBF | TK100F04K3L | AO6804A | OSG60R180KSF | UF830G-T2Q-T

 

 
Back to Top

 


 
.