SSF3002EG1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSF3002EG1
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 0.63 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 18 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
Тип корпуса: SOT23
Аналог (замена) для SSF3002EG1
SSF3002EG1 Datasheet (PDF)
ssf3002eg1.pdf
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SSF3002EG1Main Product Characteristics:V 30VDSSR (on) 1ohm(typ.)DSI 0.5ADMarking and pinSOT23 Schematic diagramAssignmentFeatures andBenefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 1
ssf3018.pdf
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SSF3018Feathers: ID=60A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=15mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF3018 is a new generation of middle voltage and high current NChannel enhancement mode t
ssf3018d.pdf
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SSF3018D Feathers: ID=80A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=14mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF3018D is a new generation of middle voltage and high current NChannel enhancement mod
ssf3056c.pdf
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SSF3056C Main Product Characteristics: NMOS PMOS D1 S1D1 S1NMOSNMOSD1 G1D1 G1VDSS 30V -30V D2 S2D2 S2PMOSPMOSD2 G2D2 G2RDS(on) 37mohm(typ.) 68mohm(typ.) ID 5A -4.5A DFN2X3-8L Schematic diagram Bottom View Features and Benefits: Advanced trench MOSFET process technology Special designed for buck-boost circuit, DSC, portable devices and gene
ssf3092g1.pdf
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SSF3092G1Main Product Characteristics:V 30VDSSR (on) 92mohm(typ.)DSI 1.4A DMarking and pinSOT23 Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf3055.pdf
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SSF3055 DDESCRIPTION The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This Gdevice is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 25V,ID = 12A RDS(ON)
ssf3051g7.pdf
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SSF3051G7Main Product Characteristics: DVDSS -30V G RDS(on) 45mohm(typ.)SID -4A Marking and pin SOT23-6Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and rev
ssf3028c1.pdf
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SSF3028C1Main Product Characteristics:V 30VDSSR (on) 28mohm(typ.)DSI 21ADTO-252 Marking and pinSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 op
ssf3036c.pdf
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SSF3036C Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm N-Channel Mosfet P-Channel Mosfet DFN 3x2-8L Schematic diagram ID 4A -3.6A Bottom View Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Список транзисторов
Обновления
MOSFET: FIR9N90FG | FIR9N65LG | FIR9N50FG | FIR96N08PG | FIR8N80FG | FIR8N70FG | FIR8N65FG | FIR8N60FG | FIR80N10LG | FIR80N08PG | FIR80N03LG | FIR7NS70ALG | FIR7NS70AFG | FIR7NS65AFG | FIR6N90FG | FIR6N70FG