SSF6005 - Даташиты. Аналоги. Основные параметры

SSF6005Main Product Characteristics: VDSS 60V RDS(on) 2.7m(typ.) ID 160AMarking and pin TO-220Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 o

SSF6007 Main Product Characteristics: VDSS -50V 60076007 RDS(on) 2.1ohm(typ.) ID -130mA Marking and p in Schematic dia gram SOT-23 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications Ultra l

SSF6008 Feathers: ID =84A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m Fully characterized avalanche voltage and current Description: The SSF6008 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter

SSF6007 50V P-Channel MOSFET Main Product Characteristics VDSS -50V 60076007 RDS(on) 2.1ohm(typ.) ID -130mA Mark in g a nd P i n Sc hema t ic D i a gra m SOT-23 Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and genera