SSF7510 - описание и поиск аналогов

 ..1. Size:488K  silikron
 ssf7510.pdf 

 9.1. Size:426K  silikron
 ssf7504.pdf 

SSF7504 Feathers ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7m (typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The SSF7504 is a new generation of middle voltage and high current N Channel enhancemen

 9.2. Size:482K  silikron
 ssf7509b.pdf 

SSF7509B Main Product Characteristics VDSS 70V RDS(on) 5.3m (typ.) ID 100A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.3. Size:417K  silikron
 ssf7505.pdf 

SSF7505 Main Product Characteristics VDSS 75V RDS(on) 3.3mohm(typ.) ID 170A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

 9.4. Size:383K  silikron
 ssf7508a.pdf 

SSF7508A Main Product Characteristics VDSS 75V RDS(on) 6m (typ.) ID 100A D2PAK Marking and pin Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.5. Size:568K  silikron
 ssf7504h.pdf 

SSF7504H Main Product Characteristics VDSS 75V RDS(on) 3.9m (typ.) ID 220A Marking and p in TO- 247 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

 9.6. Size:415K  silikron
 ssf7507.pdf 

SSF7507 Main Product Characteristics VDSS 75V RDS(on) 5mohm(typ.) ID 110A TO220 Marking and pin Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

 9.7. Size:396K  silikron
 ssf7509a.pdf 

SSF7509A Main Product Characteristics VDSS 75V RDS(on) 6.5mohm(typ.) ID 80A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

 9.8. Size:300K  silikron
 ssf7509j7.pdf 

SSF7509J7 Main Product Characteristics VDSS 80V RDS(on) 7.5mohm(typ.) ID 70A Marking and pin PQFN5*6 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.9. Size:470K  silikron
 ssf7504a7.pdf 

SSF7504A7 Main Product Characteristics VDSS 75V 1, Gate RDS(on) 2.5m (typ.) 2 3,5 7 Source 4,8 Drain ID 220A Schematic Diagram TO-263-7L Pin Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching

 9.10. Size:513K  silikron
 ssf7508.pdf 

SSF7508 Main Product Characteristics VDSS 75V RDS(on) 6m (typ.) ID 100A S che mati c di agra m TO-220 Marking a nd p in Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.11. Size:396K  silikron
 ssf7504a.pdf 

SSF7504A Feathers ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7m (typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The SSF7504A is a new generation of middle voltage and high current N Channel enhancem

 9.12. Size:392K  silikron
 ssf7509.pdf 

SSF7509 Feathers ID=80A Advanced trench process technology BV=80V Special designed for Convertors and power controls Rdson=6.5m (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The SSF7509 is a new generation of middle voltage and high current N Channel enhancement