MMFTN501 - описание и поиск аналогов

MMFTN501 Silicon N-Channel MOSFET 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSX 600 V Gate-Source Voltage VGSS 20 V 30 mA Drain Current ID Peak Drain Current1) IDM 120 mA Maximum Continuous Source Current IS 25 mA Maximum Pulse So

MMFTN3019E N-Channel Field Effect Transistor Applications Interfacing, switching Features Drain Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Gate Drive circuits can be simple Parallel use is easy Source O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain-Source Vo

MMFTN20 N-Channel Enhancement Vertical D-MOS Transistor Features High-speed switching No secondary breakdown Applications Thin and thick film circuits 1. Gate 2. Source 3. Drain General purpose fast switching applications TO-236 Plastic Package Drain Gate Source O Absolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value Unit

MMFTN138 N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source O Absolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 50 V Drain-Gate Voltage (RGS 20 K ) VDGR 50 V Gate-Source

MMFTN3406 N-Channel Enhancement Mode Power MOSFET 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID 3.6 A Drain Current - Pulsed 1) IDM 15 A Power Dissipation 1) Pd 1.4 W Therm

MMFTN3018W Silicon N-Channel MOSFET Drain Applications Interfacing, switching Gate 1. Gate 2. Source 3. Drain Source SOT-323 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain Source Voltage VDSS 30 V Gate Source Voltage VGSS 20 V Drain Current - Continuous ID 100 mA Drain Current - Pulsed IDP 1) 400 200 mW Total Power

MMFTN138W N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. Drain SOT-323 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 50 V Drain-Gate Voltage (RGS 20 K ) VDGR 50 V Gate-Source V

MMFTN123 N-Channel Logic Level Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source O Absolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS 20 V Drain Current ID 170 mA Peak Drain Current IDM 680 mA Total Power Dissipation P

MMFTN2306 N-Channel Logic Level Enhancement Mode Field Effect Transistor for high power and current handing capability 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 30 V Drain-Gate Voltage VGS 12 V Drain Current - Continuous ID 5 A

MMFTN170 N-Channel Enhancement Mode Field Effect Transistor Feature Voltage controlled small signal switch Drain High saturation current capability Gate 1. Gate 2. Source 3. Drain Source TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS 1 M ) VDGR 60 V V Gate-Source

MMFTN2302 N-Channel Logic Level Enhancement Mode Field Effect Transistor for high power and current handing capability 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 20 V Drain-Gate Voltage VGS 8 V Drain Current - Continuous ID 2.4 A

MMFTN290E N-Channel Enhancement Mode MOSFET Features Drain Very fast switching ESD protected up to 2 KV Gate Source Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Drain Current VGS = 4.5 V, TA = 25 700 1) ID mA 440 1) VGS = 4.5 V, TA = 100 Peak Drain Current (tp 10 s) IDM 2.8 A S

www.msksemi.com MMFTN3019E-MS Semiconductor Compiance Absolute Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Value Units VDS Drain-Source Voltage 30 V VGS Continuous Gate-Source Voltage 20V V 3 I Continuous Drain Current 100 mA D P Power Dissipation 150 mW D 2 R JA Thermal Resistance from Junction to Ambient 833 C /W 1. Gate 2. Source TSTG Storage Te

MMFTN170 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G 1