P1004BD - аналоги, параметры транзистора - Справочник транзисторов

P1004BD технические параметры

..1. Size:561K unikc
p1004bd.pdf pdf_icon

P1004BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 40V 55A TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC = 25 C 55 ID Continuous Drain Current TC = 70 C 44 A

8.1. Size:443K unikc
p1004bs.pdf pdf_icon

P1004BS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 11m @VGS = 10V 40V 53A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 53 ID Continuous Drain Current2 TC = 100 C 34 A IDM 159 Pulsed Drain Current1 IAS Avalanche Current 40

9.1. Size:133K ape
ap1004cmx.pdf pdf_icon

AP1004CMX Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra-low Forward Diode D BVDSS 30V Low Conductance Loss RDS(ON) 1.8m Low Profile (

9.2. Size:355K unikc
p1004hv.pdf pdf_icon

P1004HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 13m @VGS = 10V 10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 24 TA = 25 C 10 ID Continuous Drain Current TA = 70 C 8 A IDM 40 Pulsed Drain Current1 I

Другие MOSFET... P092ABD , P0950ETF , P0950ETFS , P0990AU , P1003BDF , P1003BK , P1003EK , P1003EVG , 4N60 , P1004BS , P1004HV , P1006BD , P1006BIS , P1006BK , P1006BT , P1006BTF , P1006BTFS .