P6015CSG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: P6015CSG
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 68 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.2 V
Максимально допустимый постоянный ток стока |Id|: 21 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 240 nC
Время нарастания (tr): 115 ns
Выходная емкость (Cd): 159 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm
Тип корпуса: TO263
P6015CSG Datasheet (PDF)
p6015csg.pdf
P6015CSGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V150V 21ATO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150 VVGSGate-Source Voltage 12 VTC= 25 C21IDContinuous Drain Current2TC= 100 C13AIDM60Pulsed Drain Curren
p6015cdg.pdf
P6015CDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V150V 20ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 12 VTC = 25 C20IDContinuous Drain CurrentTC = 100 C15AIDM60Pulsed Drain Current1IASAvalanche Current 20E
p6015ad.pdf
P6015AD N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V150V 25ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C25IDContinuous Drain CurrentTC = 100 C16AIDM100Pulsed Drain Current1IASAvalanche Current 20
p6015av.pdf
P6015AVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID150V 60m @VGS = 10V 5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20TA = 25 C5IDContinuous Drain CurrentTA = 70 C4AIDM22Pulsed Drain Current1I
p6015at.pdf
P6015ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V150V 26ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C26IDContinuous Drain CurrentTC = 100 C16AIDM80Pulsed Drain Current1IASAvalanche Current 21EA
ncep6015as.pdf
http://www.ncepower.com NCEP6015ASNCE N-Channel Super Trench Power MOSFET Description The NCEP6015AS uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =15A frequency switching performance. Both conduction and RDS(ON)=8.3m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS
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