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P6015CSG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P6015CSG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 68 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 21 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 240 nC
   trⓘ - Время нарастания: 115 ns
   Cossⓘ - Выходная емкость: 159 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: TO263

 Аналог (замена) для P6015CSG

 

 

P6015CSG Datasheet (PDF)

 ..1. Size:446K  unikc
 p6015csg.pdf

P6015CSG P6015CSG

P6015CSGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V150V 21ATO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150 VVGSGate-Source Voltage 12 VTC= 25 C21IDContinuous Drain Current2TC= 100 C13AIDM60Pulsed Drain Curren

 8.1. Size:530K  unikc
 p6015cdg.pdf

P6015CSG P6015CSG

P6015CDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V150V 20ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 12 VTC = 25 C20IDContinuous Drain CurrentTC = 100 C15AIDM60Pulsed Drain Current1IASAvalanche Current 20E

 9.1. Size:517K  unikc
 p6015ad.pdf

P6015CSG P6015CSG

P6015AD N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V150V 25ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C25IDContinuous Drain CurrentTC = 100 C16AIDM100Pulsed Drain Current1IASAvalanche Current 20

 9.2. Size:342K  unikc
 p6015av.pdf

P6015CSG P6015CSG

P6015AVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID150V 60m @VGS = 10V 5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20TA = 25 C5IDContinuous Drain CurrentTA = 70 C4AIDM22Pulsed Drain Current1I

 9.3. Size:452K  unikc
 p6015at.pdf

P6015CSG P6015CSG

P6015ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V150V 26ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C26IDContinuous Drain CurrentTC = 100 C16AIDM80Pulsed Drain Current1IASAvalanche Current 21EA

 9.4. Size:321K  ncepower
 ncep6015as.pdf

P6015CSG P6015CSG

http://www.ncepower.com NCEP6015ASNCE N-Channel Super Trench Power MOSFET Description The NCEP6015AS uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =15A frequency switching performance. Both conduction and RDS(ON)=8.3m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS

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