PK626BA - Даташиты. Аналоги. Основные параметры

PK626BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.9m @VGS = 10V 30V 110A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TC = 25 C 110 ID Continuous Drain Current3 TC = 100 C 69 IDM 150 Pulsed Drain Cur

PK626BA NIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 30V 1.9m 150A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage

Dual N-Channel Enhancement Mode PK626HY NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1 G1 Q2 30V 2.4m 99A 2,3,4 D1 5,6,7 S2 Q1 30V 7m 43A 8 G2 9 S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS 30 30 V