PB544JU - параметры транзистора MOSFET, его аналоги, datasheet

PB544JU Datasheet (PDF)

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PB544JUDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID8m @VGS = 4.5V20V 12.9A1,2:S13:G14:G25,6:S27:D1/D2TDFN 2X3-6ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20 VVGSGate-Source Voltage 10 VTA = 25 C12.9IDContinuous Drain CurrentTA=

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Dual N-Channel Enhancement Mode PB544JUNIKO-SEM TDFN 2x3-6 Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 8 m 12.9A 1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 10 VT

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PB544DUN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID13.5m @VGS = 10V20V 10APDFN 2X3SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20 VVGSGate-Source Voltage 8 VTA = 25 C10IDContinuous Drain CurrentTA = 70C8.2AIDM40Pulsed Drain Curre

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