APM4550J - аналоги, параметры транзистора - Справочник транзисторов

APM4550J даташит

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APM4550J Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 30V/8A, RDS(ON) = 20m (typ.) @ VGS = 10V RDS(ON) = 30m (typ.) @ VGS = 4.5V P-Channel Top View of DIP - 8 -30V/-7A, RDS(ON) = 40m (typ.) @ VGS = -10V D1 D1 S2 RDS(ON) = 62m (typ.) @ VGS = -4.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compl

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APM4550K Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 30V/7A, RDS(ON) = 20m (typ.) @ VGS = 10V RDS(ON) = 30m (typ.) @ VGS = 4.5V P-Channel Top View of SOP - 8 -30V/-5A, RDS(ON) = 40m (typ.) @ VGS = -10V (7) (8) (3) RDS(ON) = 62m (typ.) @ VGS = -4.5V D1 D1 S2 Super High Dense Cell Design Reliable and Rugged (4) Lead Free Av

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APM4550KC www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VG

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APM4552K Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 N-Channel D1 D2 30V/7A, D2 RDS(ON) = 23m (typ.) @ VGS = 10V RDS(ON) = 34m (typ.) @ VGS = 4.5V S1 P-Channel G1 -30V/-5A, S2 G2 RDS(ON) = 46m (typ.) @ VGS =-10V RDS(ON) = 62m (typ.) @ VGS =-4.5V Top View of SOP - 8 Super High Dense Cell Design (6) (5) (8) (7) D2 D2 D1 D1

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