Shenzhen Tuofeng Semiconductor Technology Co., Ltd 44024402N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4402 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 12Aoperation with gate voltages as low as 2.5V. This RDS(ON)

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4402/DGeneral Purpose Transistors2N4402PNP Silicon*2N4403*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 40 VdcEmitterBase Voltage

Ordering number : ENN7037EC4402CN-Channel Silicon MOSFETEC4402CSmall Signal Switch, Interface ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2197 2.5V drive.[EC4402C]0.50.2 0.20.053 42 1(Bottom view)0.051 : Gate2 : Source3 : Drain4 : Drain0.8SANYO : E-CSP1008-4SpecificationsAbsolute Maximum

Ordering number:EN2755NPN Epitaxial Planar Silicon Transistor2SC4402VHF/UHF Mixer, Local Oscillator,Low-Voltage Amplifier ApplicationsApplications Package Dimensions VHF/UHF MIX/OSC, low-voltage high-frequencyunit:mmamplifiers.2059B[2SC4402]0.3Features0.15 Low-voltage operation3: fT=3.0GHz typ (VCE=3V)0~0.1: MAG=12dB typ (VCE=3V, IC=10mA): NF=1.5dB ty

2N4402C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VV Collector-Base Voltage 40 VCBOVEBO Emitter-Base Voltage5.0VICCollector Current - Continuo

PMCM4402UPE20 V, P-channel Trench MOSFET30 May 2017 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Dischar

2N4402/4403 PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage VEBO -5 VCollector Current IC -600 mACollector Dissipation

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SOT23 PNP SILICON PLANAR402 FMMT4402GENERAL PURPOSE TRANSISTOR403 FMMT4403ISSUE 2 - MARCH 1995 E T I D T I T C T VB ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I i V

/ Technical InformationIGBT-FF1200R17KE3_B2IGBT-modulesIGBT, / IGBT,Inverter Preliminary Data / Maximum Rated ValuesT = 25C V 1700 Vvj CESCollector-emitter voltage T = 80C, T = 150C I 1200 AC vj max C nomContinuous DC collector current T = 25C, T = 150

2N4402 -0.6 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Amplifier TransistorG H Emitter Base CollectorJA DCollector MillimeterBREF. Min. Max.A 4.40 4.70KB 4.30 4.70C 12.70 -D 3.30 3.81E

SSG4402N 6.7 A, 60 V, RDS(ON) 38 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N4402 / 2N4403PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORSTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"CBEGeneral Purpose Switching And Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSCollector Emi

SEMICONDUCTOR KN4402/4403TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CComplementary to KN4400/4401.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25)C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO -40 VCollector-Base VoltageG 0.85H 0.45_VCEO -40 VCollector-

SEMICONDUCTOR KN4402S/4403STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURES DIM MILLIMETERSComplementary to the KN4400S/4401S_+A 2.93 0.20B 1.30+0.20/-0.15Suffix U : Qualified to AEC-Q101.C 1.30 MAX23 D 0.40+0.15/-0.05ex) KN4403S-RTK/HUE 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K

AO440220V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO4402 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 20Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

AO4402G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

Analog Power AM4402NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)38 @ VGS = 10V7.4 Low thermal impedance 6050 @ VGS = 4.5V6.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Spec. No. : C910Q8 Issued Date : 2013.05.21 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 20VMTN4402Q8 ID 20A4.3m VGS=4.5V, ID=20A RDSON(TYP) 5.3m VGS=2.5V, ID=20A Description The MTN4402Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switc

P4402FAGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-20V 44m @VGS = -4.5V -5ATSOP- 06ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -20VVGSGate-Source Voltage 12TA = 25 C-4.2IDContinuous Drain CurrentTA = 70 AC-3.3IDM-20Pulsed Drain

2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 40 VEmitter Base Voltage

SMD Type MOSFETN-Channel MOSFETAO4402 (KO4402)SOP-8 Features VDS (V) = 20V ID = 20 A (VGS = 4.5V)1.50 0.15 RDS(ON) 5.5m (VGS = 4.5V) RDS(ON) 7m (VGS = 2.5V)1 Source 5 Drain6 Drain2 SourceD7 Drain3 Source8 Drain4 GateGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20V Gat

Single N-channel MOSFETELM34402AA-NGeneral description Features ELM34402AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)

SENSITRONSHD724402SEMICONDUCTOR TECHNICAL DATA DATA SHEET 994, REV. B Formerly part number SHDG1024 600 VOLT, 40 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA WITH FAST REVERSE RECOVERY DIODE ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown

STN4402STN4402STN4402STN4402N Channel Enhancement Mode MOSFET12ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4402 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited f

HM4402CN-Channel Enhancement Mode Power MOSFET Description The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)

HM4402EDescription The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)

HM4402BN-Channel Enhancement Mode Power MOSFET Description The HM4402B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =21A Schematic diagram RDS(ON)

H Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID = A RDS(ON)