Shenzhen Tuofeng Semiconductor Technology Co., Ltd N AND P-CHANNEL ENHANCEMENT4501 MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 28mD1D1 Fast Switching Performance ID 7AG2S2 P-CH BVDSS -30VG1S1SO-8 RDS(ON) 50mDescription ID -5.3AThe SO-8 package is widely preferred for commercial-industrialsurface mount app

PMP4501V; PMP4501G;PMP4501YNPN/NPN matched double transistorsRev. 04 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolatedinternally.Table 1. Product overviewType number Package NPN/NPN

MP4501 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4501 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 5 W (Ta = 25C

SMD Type ICSMD Type TransistorsComplementary MOSFET Half-Bridge (N- and P-Channel)KI4501DYPIN ConfigurationAbsolute Maximum Ratings TA =25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 30 -8 VGate-Source Voltage VGS 20 8 VContinuous Drain Current (TJ = 150 )* TA =25 9 6.2 AIDTA =70 7.4 5.0 APulsed Drain Current IDM 30 20 AContinuous Source Current (D

SMD Type ICSMD Type TransistorsComplementary (N- and P-Channel) MOSFET Half-BridgeKI4501ADYFeaturesTrenchFET Power MOSFETAbsolute Maximum Ratings TA = 25N-Channel P-ChannelParameter Symbol Unit10 sec Steady State 10 sec Steady StateDrain-Source Voltage VDS 30 -8 VGate-Source Voltage VGS 20 8 VContinuous Drain Current (TJ = 150 )* TA =25 8.8 6.3 -5.7 -4.1 AIDTA =70 7

May 2001 FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is Q1: N-Channel produced using Fairchilds advanced PowerTrench 9.3A, 30V RDS(on) = 18 m @ VGS = 10V process that has been especially tailored to minimize the on-state resistance and yet maintain low gate RDS(on) = 23 m @ VGS =

PRELIMINARY DATA SHEETNEC's SUPER LOW NOISE NE450184CAMPLIFIER N-CHANNEL HJ-FETFEATURES OUTLINE DIMENSIONS (Units in mm) SUPER LOW NOISE FIGURE & 1.78 0.2 HIGH ASSOCIATED GAIN: NF = 1.0 dB TYP., Ga = 10 dB TYP. @ f = 24 GHz1 GATE LENGTH:L Lg

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMP4501V; PMP4501G;PMP4501YNPN/NPN matched double transistorsRev. 04 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolatedinternally.Table 1. Product overviewType number Package NPN/NPN

PMP4501V; PMP4501G;PMP4501YNPN/NPN matched double transistorsRev. 04 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolatedinternally.Table 1. Product overviewType number Package NPN/NPN

PMP4501V; PMP4501G;PMP4501YNPN/NPN matched double transistorsRev. 04 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolatedinternally.Table 1. Product overviewType number Package NPN/NPN

PMP4501QAS45 V, 100 mA NPN/NPN matched double transistors9 February 2018 Product data sheet1. General descriptionNPN/NPN matched double transistors in an ultra small DFN1010B-6 (SOT1216) leadless Surface-Mounted Device (SMD) plastic package.PNP/PNP complement: PMP5501QAS2. Features and benefits Reduces component count Reduces pick and place costs Low package height

Si4501BDYVishay SiliconixComplementary (N- and P-Channel) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.017 at VGS = 10 V 12 TrenchFET Power MOSFETN-Channel 30 7.90.020 at VGS = 4.5 V 11 100 % Rg and UIS Tested0.027 at VGS = - 4.5 V - 8 Compliant to RoHS Directive 2002/95

Si4501ADYVishay SiliconixComplementary (N- and P-Channel) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = 10 V 8.8 TrenchFET Power MOSFETN-Channel 300.027 at VGS = 4.5 V 7.0 Compliant to RoHS Directive 2002/95/EC0.042 at VGS = - 4.5 V - 5.7P-Channel - 80.060 at VGS = - 2.5

Si4501DYVishay SiliconixComplementary MOSFET (N- and P-Channel)FEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)0.018 at VGS = 10 V 9N-Channel 300.027 at VGS = 4.5 V 7.40.042 at VGS = - 4.5 V 6.2P-Channel - 80.060 at VGS = - 2.5 V 5.2S2SO-8 S D 1 1 8 G 1 2 D 7 G2S D 2 3 6 G 2 4 D 5 D

NST45010MW6T1GDual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagehttp://onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifi

NTR4501N, NSTR4501NPower MOSFET20 V, 3.2 A, Single N-Channel, SOT-23Features Leading Planar Technology for Low Gate Charge / Fast Switchinghttp://onsemi.com 2.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint V(BR)DSS RDS(on) Typ ID Max(Note 1) NSTR Prefix for Automotive and Other Applications Requiring70 mW @ 4.5 V 3.6 AUnique Site

NST45011MW6T1G,NSVT45011MW6T3GDual Matched GeneralPurpose TransistorNPN Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT-363 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense an

NTR4501N, NVR4501NMOSFET Power, Single,N-Channel, SOT-2320 V, 3.2 AFeatureswww.onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max(Note 1) SOT-23 Surface Mount for Small Footprint70 mW @ 4.5 V 3.6 A NVR Prefix for Automotive and Other Applications Requiring20 VUniqu

NTR4501NPower MOSFET20 V, 3.2 A, Single N-Channel, SOT-23Features Leading Planar Technology for Low Gate Charge / Fast Switchinghttp://onsemi.com 2.5 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint(Note 1) Pb-Free Packages are Available70 mW @ 4.5 V 3.6 A20 VApplications88 mW @ 2.5 V 3.1 A Load/P

NST45010MW6T1GDual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagehttp://onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifi

NST45010MW6T1GDual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagehttp://onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifi

NST45011MW6T1G,NSVT45011MW6T3GDual Matched GeneralPurpose TransistorNPN Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT-363 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense an

NST45010MW6T1GDual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagehttp://onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NILMS4501NPower MOSFET withCurrent Mirror FET24 V, 9.5 A, N-Channel, ESD Protected,1:250 Current Mirror, SO-8 Leadlesshttp://onsemi.comN-Channel MOSFET with 1:250 current mirror device utilizing thelatest ON Semiconductor technology to achieve low figure of meritVDSS RDS(on) Typ ID MAXwhile keeping a high accuracy in the linear region. This device takes24 V 12 mW @ 4.5 V 9.5

NTR4501N, NVR4501NPower MOSFET20 V, 3.2 A, Single N-Channel, SOT-23Features Leading Planar Technology for Low Gate Charge / Fast Switchinghttp://onsemi.com 2.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint V(BR)DSS RDS(on) Typ ID Max(Note 1) NVR Prefix for Automotive and Other Applications Requiring70 mW @ 4.5 V 3.6 AUnique Site an

NTHS4501NPower MOSFET30 V, 6.7 A, Single N-Channel, ChipFETt PackageFeatureshttp://onsemi.com Planar Technology Device Offers Low RDS(on) and Fast Switching Speedin a ChipFET Package Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6.V(BR)DSS RDS(on) Typ ID MaxIdeal Device for Applications Where Board Space is at a Premium.30 mW @ 10 V ChipFET Packag

NST45011MW6T1GDual Matched GeneralPurpose TransistorNPN Matched PairThese transistors are housed in an ultra-small SOT-363 packagehttp://onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifi

This product complies with the RoHS Directive (EU 2002/95/EC).DSC4501Silicon NPN epitaxial planar typeFor low frequency amplificationDSC2501 in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B Eco-friendly Halogen-free package Pin N

2SC4501(L)/(S)Silicon NPN EpitaxialApplicationHigh gain amplifier and medium speed switchingOutlineDPAK42, 441121. Base 3 2. Collector 3. Emitter S Type 124. Collector33L Type2SC4501(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base volta

SSG4501N Channel 7A, 30V,RDS(ON) 28m P Channel -5.3A, -30V,RDS(ON) 50m Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8Description0.190.250.400.90o0.375 REFThe SSG4501 provide the designer with the best combination of fast switching, 6.205.800.25rugged

WTC45013 DRAINN-Channel Enhancement DRAIN CURRENTMode Power MOSFET3.2 AMPERESP b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE1GATE20 VOLTAGE2 SOURCEFeatures:* Leading Planar Technology for Low Gate Charge / Fast Switching.3* 2.5V Rated for Low Voltage Gate Drive.1* SOT-23 Surface Mount for Small Footprint.2Applications:SOT-23* Load/Power Switch for Portables.* Lo

WTK4501N-CHANNELN AND P-Channel Enhancement 7,8 DRAINDRAIN SOURCE VOLTAGEMode POWER MOSFET30 VOLTAGEP b Lead(Pb)-FreeDRAIN CURRENT7 AMPERES2 GATEP-CHANNEL1 SOURCEDRAIN SOURCE VOLTAGEFeatures:5,6 DRAIN-30 VOLTAGE* Low Gate changeDRAIN CURRENT* Low On-Resistance N-CH RDS(ON)

W4501DW2 13Epitaxial Planer Transistor Silicon NPN654P b Lead(Pb)-Free12345 6SOT-363(SC-88)Features:NPN+NPN* Both 2SC2412K Chip x 2 in a SOT-363Maximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 50 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 7 VdcCollector Current-Continuous IC150 mAdcThermal Characteristics

AP4501GDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge N-CH BVDSS 30VD2D2D1 Fast Switching Speed RDS(ON) 28mD1 PDIP-8 Package ID 7A RoHS Compliant P-CH BVDSS -30VG2S2RDS(ON) 50mPDIP-8G1S1ID -5.3ADescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with t

AP4501AGEM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 20mD1D1 Fast Switching Performance ID 8AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VS2G1S1SO-8RDS(ON) 60mDescription ID -4.6AAdvanced Power MOSFETs from APEC

AP4501AGMRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance D1 RDS(ON) 28mD1 Fast Switching Performance ID 7AG2S2 P-CH BVDSS -30VG1S1SO-8RDS(ON) 50mDescription ID -5.3AAdvanced Power MOSFETs from APEC provide thedesigner with the best co

AP4501GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 18m Fast Switching Performance ID 10.2AS1G1S2 Halogen-Free Product P-CH BVDSS -30VG2RDS(ON) 50mTO-252-4LDescription ID -6.4AAdvanced Power MOSFETs from APEC provi

AP4501CGM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low Gate Charge D1 RDS(ON) 25mD1 Fast Switching Performance ID 7AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S1SO-8RDS(ON) 80mDescription ID -4AAdvanced Power MOSFETs from APEC provid

AP4501AGEY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 20mD1D1G2 Fast Switching Performance ID 6.5AS2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S12928-8RDS(ON) 45mDescription ID -4.5AAP4501A series are from Advan

AP4501GSDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2Simple Drive Requirement N-CH BVDSS 30V D2D1Low On-resistance D1 RDS(ON) 27m Fast Switching Characteristic ID 7A G2P-CH BVDSS -30VS2PDIP-8G1RDS(ON) 49mS1Description ID -5AThe Advanced Power

AP4501AGM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 28mD1D1 Fast Switching Performance ID 7AG2 RoHS Compliant P-CH BVDSS -30VS2G1S1RDS(ON) 50mSO-8Description ID -5.3AAdvanced Power MOSFETs from APEC provide the desi

AP4501GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 28mD1D1 Fast Switching Performance ID 7AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VS2G1S1SO-8 RDS(ON) 50mDescription ID -5.3AAdvanced Power MOSFETs from APEC pro

AP4501GMRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance D1 RDS(ON) 28mD1 Fast Switching Performance ID 7AG2S2 P-CH BVDSS -30VG1S1SO-8RDS(ON) 50mDescription ID -5.3AAdvanced Power MOSFETs from APEC provide thedesigner with the best com

Spec. No. : C385Q8 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date : 2011.03.18 Page No. : 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4501Q8 Description The MTC4501Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design,

GreenProductS TS 4501S amHop Microelectronics C orp.t. 12,2007cOP-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR YF E ATUR E SVDS S ID S uper high dense cell design for low R DS (ON).R DS (ON) ( m ) MaxR ugged and reliable.65 @ VG S = -10V-40V -3.5AS OT-23 Package.85 @ VG S = -4.5VDS OT-23GSABS OLUTE MAXIMUM R ATINGS (TA=25 C un

LESHAN RADIO COMPANY, LTD.Power MOSFET20 V, 3.2 A, Single N-Channel,SOT-23APPLICATIONSLN4501LT1G1) Load/Power Switch for Portables2) Load/Power Switch for Computing33) DC-DC ConversionFEATURES11)Leading Planar Technology for Low Gate Charge / Fast Switching22)2.5 V Rated for Low Voltage Gate DriveSOT 23 (TO236AB)3)SOT-23 Surface Mount for Small Footprin

SM4501PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD -20V/-12.2A,DRDS(ON) = 14m (max.) @ VGS =-4.5VRDS(ON) = 20m (max.) @ VGS =-2.5VSSRDS(ON) = 32m (max.) @ VGS =-1.8VSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)D D D D(4)ApplicationsG Power Management in Notebook Compu

Product specificationNTR4501NPower MOSFETV(BR)DSS RDS(on) TYP ID MAX(Note 1)20 V, 3.2 A, Single N-Channel, SOT-2370 mW @ 4.5 V 3.6 A20 V85 mW @ 2.5 V 3.1 AFeatures Leading Planar Technology for Low Gate Charge / Fast SwitchingN-Channel 2.5 V Rated for Low Voltage Gate DriveD SOT-23 Surface Mount for Small Footprint Pb-Free Package is AvailableApplicat

SMD Type ICSMD Type TransistorsComplementary PowerTrench Half-Bridge MOSFETKDS4501HFeaturesN-Channel9.3A, 30V RDS(ON) = 18m @VGS =10 VRDS(ON) = 23m @VGS =4.5VP-Channel-5.6 A, -20 V RDS(ON) =46 m @VGS =- 4.5 VRDS(ON) =63m @VGS =-2.5VAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P- Channel UnitDrain to Source Voltage VDSS 30 -20 VGate to Source Voltage VGS

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM4501JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 20 Volts CURRENT 8.3 AmpereP-channel: VOLTAGE 20 Volts CURRENT 5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R

SSM4501GMN AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2Simple Drive Requirement D2RDS(ON) 28mD1Low On-resistance D1ID 7AFast Switching G2P-CH BVDSS -30VS2G1SO-8RDS(ON) 50mS1DESCRIPTION ID -5.3AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,

SSM4501GSDN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2D2D1RDS(ON) 27mSimple Drive Requirement D1Low On-resistance ID 7AFast Switching Characteristic P-CH BVDSS -30VG2S2RDS(ON) 49mPDIP-8G1S1DESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of

AP4501AGMwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG