Shenzhen Tuofeng Semiconductor Technology co., LTD4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) VDSS ID RDS(on) (m-ohm) Max VDSS ID RDS(on) (m-ohm) Max 28 @ VGS = 10 V,ID=6.9A 50 @ VGS = -10V,ID=- 6.0A 6.9A -6.0 A30V -30V42 @ VGS = 4.5V,ID=5.0A 80@VGS = -4.5V, ID=- 5.0AAbsolute Maximum Ratings (TA=25oC, unless otherwise

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOP-8 Plastic-Encapsulate MOSFETS 4606N and P-Channel Enhancement Mode Power MOSFET Description The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channelGen

RN4606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4606 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Transistor2SC4606Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA17626.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.M type package allowing easy automatic and manual insertion as0.85well as stand-al

Transistor2SC4606Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA17626.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.M type package allowing easy automatic and manual insertion as0.85well as stand-al

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4606 N-and P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)TYP SOP8 19m@10V6.9A30V28m@4.5V29m@-10V-30V -6.0A47m@-4.5VDESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low on-r

AO460630V Complementary MOSFETGeneral Description Product SummaryThe AO4606 uses advanced trench technology N-Channel P-ChannelMOSFETs to provide excellent RDS(ON) and low gateVDS= 30V -30Vcharge. The complementary MOSFETs may be used to ID= 6A (VGS=10V) -6.5A (VGS=-10V)form a level shifted high side switch, and for a host of RDS(ON) RDS(ON)other applications.

AP4606PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.7m Fast Switching Characteristic ID3 125AG RoHS Compliant & Halogen-FreeSDescriptionAP4606 series are from Advanced Power innovated designand silicon process technology to achieve the lowes

SSF4606 DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES N-Channel VDS = 30V,ID = 6.9A RDS(ON)

BRCS4606HSC Rev.B Mar.-2022 DATA SHEET / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel VDS(V)=30V VDS(V)=-30V ID=6.9A ID=-6.0A RDS(ON)

BRCS4606SC Rev.E Oct.-2018 DATA SHEET / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channelVDS(V)=30V VDS(V)=-30V ID=6.9A ID=-6A RDS(ON)

SMD Type MOSFETComplementary Trench MOSFET AO4606 (KO4606)SOP-8 Features N-ChannelVDS=30V ID=6ARDS(ON) 30m (VGS = 10V)RDS(ON) 42m (VGS = 4.5V)1.50 0.15 P-ChannelVDS=-30V ID=-6.5ARDS(ON) 28m (VGS =-10V)1 Source2 8 Drain2RDS(ON) 44m (VGS =-4.5V)7 Drain22 Gate26 Drain13 Source15 Drain14 Gate1D2 D1G2 G1S2 S1N-chann

Complementary MOSFET ELM14606AA-NGeneral Description Features ELM14606AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=6.9A(Vgs=10V) Id=-6A(Vgs=-10V) Rds(on)

http://www.ncepower.com NCE4606BN and P-Channel Enhancement Mode Power MOSFET Description The NCE4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channelGeneral Features N-Channel Schematic diagram VDS

http://www.ncepower.com NCE4606AN and P-Channel Enhancement Mode Power MOSFET Description The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Sc

http://www.ncepower.comNCE4606CN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4606C uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channel P-channelGeneral Features N-Channel Schematic diagramV = 30V,I

Pb Free Producthttp://www.ncepower.com NCE4606N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =

SHD224605SENSITRON SHD224606SEMICONDUCTORTECHNICAL DATADATA SHEET 812, REV. -HERMETIC POWER MOSFETN-CHANNEL(Standard and Fast-FET)DESCRIPTION: A 500 VOLT, 24 AMP, 0.23 RDS(ON) MOSFET IN A HERMETIC TO-258 PACKAGE.SHD224605: Formerly SHD2243, N-Channel Enhancement Mode.SHD224606: Formerly SHD2243F, N-Channel Enhancement Mode with Fast Intrinsic Diode.MAXIMUM RATINGS (AT Tj

STC4606 N&P Pair Enhancement Mode MOSFET 6.0A / -6.0A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

AP4606CS / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channelVDS(V)=30V VDS(V)=-30V ID=6.9A ID=-6A RDS(ON)

AS4606BS N and P-Channel Enhancement Mode MOSFETProduct Summary V R I V R I (BR)DSS DS(on)MAX D (BR)DSS DS(on)MAX D30m@10V 30m@-10V 30V 6A -30V -6.5A 42m@4.5V 45m@-4.5V Feature Application Advanced trench process technology Power Management High Density Cell Design For Ultra Low DC/DC Converter On-Resistance LCD TV & Monitor Display inverter

HSM4606 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM4606 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with high 30V 22m 7A cell density, which provide excellent RDSON and gate charge for most of the synchronous buck -30V 26m -6A converter applications. The HSM4606 meet the RoHS and Green Product requirement

PT4606 Complementary High Density Trench MOSFETPRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)VDSS ID RDS(on) (m) Max VDSS ID RDS(on) (m) Max6.5A 28 @ VGS= 10V -6A 37 @ VGS= -10V30V -30V5A 41 @ VG 4.5V -5A 57 @ VGS= -4.5VS=D 1 D 2SOP-8S1 1 8 D12G 1 7 D13 6S 2 D24 5G 2 D 2S 1 S 2ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)Param

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 30V Complementary Power Transistor SGO4606T Rev. 1.0 Aug. 2016 www.supersemi.com.cn Jun, 2015 SG-FET SGO4606T 30V Complementary MOSFET Description Features The SG-MOSFET uses trench MOSFET technology that is N-Channel P-Channel uniquely optimized to provide the most efficient h

WSP4606AN-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSP4606A is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 22m 6.8ARDSON and gate charge for most of the synchronous buck converter applications . -5.6A-30V 45mThe WSP4606A meet the RoHS and Green Applications

WSP4606N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSP4606 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 30V 18m 7Agate charge for most of the synchronous buck converter applications . -6A-30V 30mThe WSP4606 meet the RoHS and Green Applications Produc

SHANGHAI June 2006MICROELECTRONICS CO., LTD.SE4606LComplementary Enhancement Mode Field Effect TransistorRevision:AExternal Dimensions: (Unit:mm)Features n-channel,VDS (V) = 20V ,ID =7ARDS(ON) =20.0m (VGS=4.5V) p-channel,VDS (V) = -18V ,ID =- 5ARDS(ON) =30m (VGS=-4.5V)Applications Power Management in Desktop or DC/DCConvertersConstruction Sili

SE4606S N+P Channel Enhancement-Mode MOSFET Revision: A General Description Features Advanced trench technology to provide For N-Channel MOSFET excellent RDS(ON), low gate charge and low VDS = 30V operation voltage. This device is suitable for using RDS(ON) =24m @ VGS=10V as a load switch or in PWM applications. RDS(ON) =39m @ VGS=4.5V Low RDS(on)

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE4606 Complementary Enhancement Mode Field Effect Transistor Revision:A External Dimensions: (Unit:mm) Features n-channel, VDS (V) = 30V ,ID = 8.5A RDS(ON)

SM4606P-Channel Enhancement-Mode MOSFETDescription SM4606N-channel P-channel Schematic diagram General Features N-ChannelMarking and pin assignment P-ChannelSOP-8 top view Ordering Information Ordering Number Pin AssignmentPackage Packing1 2 3 4 5 6 7Lead Free Halogen Free 8SM4606SR G D1 D2SM4606PR L SOP-8 S2 S1 G1 D1 D2G2 Tape ReelSM4606

VBZA4606www.VBsemi.comN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.015 at VGS = 10 V 9 100 % Rg and UIS TestedN-Channel 30 13 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 8APPLICATIONS0.021 at VGS = - 10 V - 8

MT4606www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS =

NCE4606www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

AO4606Awww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

RoHS COMPLIANT YJS4606A N-Channel and P-Channel Complementary Power MOSFET Product Summary NMOS V 30V DS I 6A D R ( at VGS=10V) 29mohm DS(ON) R ( at VGS=4.5V) 40mohm DS(ON)PMOS V -30V DS I -5A D R ( at VGS=-10V) 55mohm DS(ON) R ( at VGS=-4.5V) 68mohm DS(ON) 100% V Tested DSGeneral Description Tr

HM4606CN and P-Channel Enhancement Mode Power MOSFET Description The HM4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 20V,ID =5.0A Schematic diagram RDS(ON)

HM4606DN and P-Channel Enhancement Mode Power MOSFET Description The HM4606D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Schematic diagram RDS(ON)

HM4606BN and P-Channel Enhancement Mode Power MOSFET Description The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Schematic diagram RDS(ON)

HM4606N and P-Channel Enhancement Mode Power MOSFET Description The HM4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 30V,ID =7.0A Schematic diagram RDS(ON)

HM4606AN and P-Channel Enhancement Mode Power MOSFET Description The HM4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Schematic diagram RDS(ON)