4953 - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4953 4953 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5.3 A, 30 V R = 59 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 89 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management

GOFORD 4953 Description D1 D2 The 4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2 Schematic diagram General Features VDSS RDS(ON) RDS(ON) ID @ (Typ) @ -4.5V -10V (Typ) m m -30V 73 48 -5.1 A

Plastic-Encapsulate Mosfets P-Channel Enhancement Mode Power MOSFET Description 4953 The 4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -5.1A RDS(ON)

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8L Dual -30V P-Channel PowerTrench MOSFET 4953 Dual 4953 P-Channel -30V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOP-8 D2 D2 0.059 @-10V . D1 -30V -5.3A D1 0.089 @-4.5V G2 G S2 G1 S S S1 SO-8 S Pin 1 Equivalent Cir cuit D1 D2 General FEATURE TrenchFET Power MOSFET Lead free product is acquired Surface mount p

ME4953 Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON) 60m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 90m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

2N4953 NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. Sourced from Process 10. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO C

May 2002 FDS4953 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5 A, 30 V R = 55 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 95 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave d

SQ4953EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 30 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = - 10 V 0.045 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.085 Material categorization ID (A) per leg - 6.6 For definitions of compliance please see Co

Si4953ADY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.053 at VGS = - 10 V - 4.9 TrenchFET Power MOSFETs - 30 0.090 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 To

Si4953DY Vishay Siliconix Dual P-Channel 30-V(D-S) MOSFET FEATURES PRODUCT SUMMARY D 100% Rg Tested VDS (V) rDS(on) (W) ID (A) 0.053 @ VGS = -10 V -4.9 -30 30 0.095 @ VGS = -4.5 V -3.6 S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View D1 D1 D2 D2 Ordering Information Si4953DY Si4953DY-T1 (with Tape and Reel) P-Channel MOSFET P-Channel MOSFET ABSOLUTE M

MCQ4953 Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Epoxy Meets UL 94 V-0 Flammability Rating Dual Moisture Sensitivity Level 1 P-Channel Halogen Free Available Upon Request By Adding Suffix "-HF" Power MOSFET Maximum Ratings Operating Junction Temperature Range -55 C to +150 C Storage Temp

Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Dielectric breakdown voltage of the package > 5kV 1.4

UNISONIC TECHNOLOGIES CO., LTD UTM4953 Power MOSFET DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM4953 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate SOP-8 voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD UTM4953 Preliminary Power MOSFET DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM4953 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate SOP-8 voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

SSG4953P -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) B assures minimal power loss and conserves energy, making this device ideal for use in po

SSG4953 -5A, -30V,RDS(ON) 53m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOP-8 Description 0.19 0.25 0.40 0.90 o The SSG4953 provide the designer with the best Combination of fast switching, 0.375 REF ruggedized device design, Ultra low on-resistance and cost-effectiveness. 6.

TSM4953D 30V Dual P-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m ) ID (A) 3. Source 2 6. Drain 2 60 @ VGS = 10V -4.9 4. Gate 2 5. Drain 2 -30 90 @ VGS = 4.5V -3.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

CEM4953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.5A, RDS(ON) = 58m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25

CEM4953H Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.5A, RDS(ON) = 64m @VGS = -10V. RDS(ON) = 95m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM

AP4953GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 Low Gate Charge RDS(ON) 53m D1 D1 Fast Switching ID -5A G2 RoHS Compliant S2 G1 SO-8 S1 D2 Description D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G

AP4953GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 Low Gate Charge RDS(ON) 53m D1 D1 Fast Switching ID -5A G2 S2 G1 SO-8 S1 D2 Description D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G1 ruggedized device

Analog Power AM4953P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 52 @ VGS = -10V -5.2 Low thermal impedance -30 89 @ VGS = -4.5V -4.0 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

AFP4953S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4953S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=52m @VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=76m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

AFP4953WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFS4953WS, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=80m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4953A 4953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5.3 A, 30 V R = 55 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 85 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power managemen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4953B 4953B Dual 20V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 3.5 A, 20 V R = 70 m @ V = 4.5V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 135m @ V = 2.5 .5 V DS(ON) GS process. It has been optimized for power manage

Spec. No. C402Q8 Issued Date 2006.06.15 CYStech Electronics Corp. Revised Date 2014.06.10 Page No. 1/8 Dual P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTDP4953Q8 ID -5.3A RDSON@VGS=-10V, ID=-5A 50m (typ) RDSON@VGS=-4.5V, ID=-4A 75m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and

Spec. No. C401Q8 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953BDYQ8 Description The MTDP4953BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SO

APM4953K Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 -30V/-4.9A , D2 D2 RDS(ON)=53m (typ.) @ VGS=-10V RDS(ON)=80m (typ.) @ VGS=-4.5V S1 Reliable and Rugged G1 S2 G2 ESD Protection Top View of SOP 8 Lead Free and Green Devices Available (RoHS Compliant) (1) (3) S1 S2 Applications (2) (4) G1 G2 Power Management in Notebook Computer, Po

APM4953 Dual P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4.9A, RDS(ON) = 53m (typ.) @ VGS = -10V S1 1 8 D1 RDS(ON) = 80m (typ.) @ VGS = -4.5V G1 2 7 D1 Super High Density Cell Design S2 3 6 D2 Reliable and Rugged G2 45 D2 SO-8 Package SO - 8 Applications S1 S2 Power Managemen

Green Product S TM4953 S amHop Microelectronics C orp. J ul 05 2005 ver 1.2 Dual P-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 55 @ VG S = -10V -30V -4.5A S urface Mount Package. 85 @ VG S = -4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S

SSF4953 D1 D2 DESCRIPTION The SSF4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G1 G2 been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S1 S2 Schematic diagram GENERAL FEATURES D1 D1 D2 D2 VDS = -30V,ID = -5.3A 7 6 5 8 RDS(ON)

BR4953D Rev.H Oct.-2018 DATA SHEET / Descriptions SOP-8 P MOS Dual P-Channel MOSFET in a SOP-8 Plastic Package. / Features Super high dense cell design for low RDS(ON),Rugged and reliable. / Applications

SM4953K Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 D2 -30V/-4.9A , D2 RDS(ON)=53m (typ.) @ VGS=-10V RDS(ON)=80m (typ.) @ VGS=-4.5V S1 G1 Reliable and Rugged S2 G2 Lead Free and Green Device Available Top View of SOP-8 (RoHS Compliant) D1 D1 D2 D2 (8) (7) (6) (5) Applications G1 G2 (2) (4) Power Management in Notebook Computer, Portable

APM4953K Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 -30V/-4.9A , D2 D2 RDS(ON)=53m (typ.) @ VGS=-10V RDS(ON)=80m (typ.) @ VGS=-4.5V S1 Reliable and Rugged G1 S2 G2 ESD Protection Top View of SOP 8 Lead Free and Green Devices Available (RoHS Compliant) (1) (3) S1 S2 Applications (2) (4) G1 G2 Power Management in Notebook Computer, Po

SEMICONDUCTOR FTK4953 TECHNICAL DATA D1 D2 DESCRIPTION The FTK4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G1 G2 been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S1 S2 Schematic diagram GENERAL FEATURES D 1 D 1 D2 D 2 8 7 6 5 VDS = -30V,ID = -4.9A RDS(ON)

SMD Type IC SMD Type IC Dual P-Channel 30-V(D-S) MOSFET KI4953DY Features 100% Rg Tested 1 Source 1 3 Source 2 2 Gate 1 4 Gate 2 7,8 Drain 1 5,6 Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 TA =25 -4.9 Continuous Drain Current (TJ = 150 ) * ID TA =70 -3.9 A Pulsed Drain Current IDM -30 C

SMD Type IC SMD Type IC Dual 30V P-Channel PowerTrench MOSFET KDS4953 Features -5 A, -30 V. RDS(ON) = 55m @VGS = -10V RDS(ON) = 95m @VGS =-4.5V Low gate charge(6nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching speed 1 Source 1 3 Source 2 2 Gate 1 4 Gate 2 7,8 Drain 1 5,6 Drain 2 Absolute Maxim

SMD Type MOSFET Dual P-Channel MOSFET SI4953ADY (KI4953ADY) SOP-8 Unit mm Features VDS (V) =-30V ID =-4.9 A (VGS =-10V) 1.50 0.15 RDS(ON) 53m (VGS =-10V) RDS(ON) 90m (VGS =-4.5V) 1 S1 5 D2 6 D2 2 G1 7 D1 3 S2 8 D1 4 G2 S1 S2 G1 G2 D1 D1 D2 D2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Unit Drain-Sourc

SMD Type MOSFET Dual P-Channel MOSFET SI4953DY (KI4953DY) SOP-8 Features VDS (V) =-30V ID =-4.9 A (VGS =-10V) 1.50 0.15 RDS(ON) 53m (VGS =-10V) RDS(ON) 95m (VGS =-4.5V) 1 Source1 5 Drain2 6 Drain2 2 Gate1 7 Drain1 3 Source2 S1 S2 8 Drain1 4 Gate2 G1 G2 D1 D1 D2 D2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drai

AiT Semiconductor Inc. AM4953 www.ait-ic.com MOSFET -30V DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4953 is the Dual P-Channel logic -30V/-5.3A, R =46m (typ.)@V =-10V DS(ON) GS enhancement mode power field effect transistor is -30V/-3.6A, R =75m (typ.)@V =-4.5V DS(ON) GS produced using high cell density. Advanced trench Super high density cell desig

Pb Free Product BLM4953 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D 1 D 2 The BLM4953 uses advanced trench technology to prov ide excellent R , low gate charge and operation with gate DS(ON) G 1 G 2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S 1 S 2 Schematic diagram GENERAL FEATURES VDS = -30V,ID

Pb Free Product BLM4953A P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1 D2 The BLM4953A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G1 G2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2 Schematic diagram GENERAL FEATURES V = -30V,I = -5.3A DS

CHENMKO ENTERPRISE CO.,LTD CHM4953JGP SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=52m @VGS= -10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m @VGS= - 4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt

GSM4953WS GSM4953WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953WS, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=60m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=80m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particula

MT4953 Dual P-Channel High Density Trench MOSFET DESCRIPTION The MT4953 uses advanced technology to provide excellent Rds(on), low switching loss and reasonable price. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and

ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 60m @VGS=-10V The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON) 90m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec

Pb Free Product http //www.ncepower.com NCE4953 NCE P-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE4953 uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features VD

PS4953A 30V Dual Channel PMOSEFT Revision 1.0 Update Date Apr. 2011 ProsPower Microelectronics Co., Ltd PS4953A 30V Dual Channel PMOSFET 2. Applications 1. General Description PWM applications The PS4953A uses advanced trench technology Load switch and design to provide excellent Rds(on) with low Power management gate charge and operation with gate voltages as

STP4953A -30V Dual P-Channel Fast Switching MOSFETs DESCRIPTION FEATURE The STP4953A is the Dual P-Channel logic -30V/-5.3A, RDS(ON) =46m (typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.6A, RDS(ON) =75m (typ.)@VGS =-4.5V produced using high cell density. advanced trench Super high density cell design for extremely low technology

SSM4953M P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BVDSS -30V D2 D2 Low on-resistance RDS(ON) 53m D1 D1 Fast switching I -5A D G2 S2 G1 SO-8 S1 D2 Description D1 MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, low on-resistance and cost- effectiveness. S2 S1

STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backli

Eternal Semiconductor Inc. EC4953 Dual P-Channel Enhancement-Mode MOSFET (-20V, -4.8A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Max 85 @VGS = -2.5V,ID=-2.0A -20V -4.8A 64 @VGS = -4.5V,ID=-4.8A Features Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23-6L package Lead Pb -free and halogen-free 6 Pin 1 Gate 1 5 4 Pin 2

Eternal Semiconductor Inc. ES4953 Dual P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) PRODUCT SUMMARY VDSS ID RDS(on) (m )TYP 49 @VGS = -10V,ID=-5.3A -30V -5.3A 68@VGS = -4.5V,ID=-3.9A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Lead Pb -free and halogen-free TOP Marking 8 7 6 5 P

Eternal Semiconductor Inc. GM4953 Dual P-Channel Enhancement-Mode MOSFET (-20V, -4.8A) PRODUCT SUMMARY VDSS ID RDS(on) (m )TYP 85 @VGS = -2.5V,ID=-2.0A -20V -4.8A 75 @VGS = -4.5V,ID=-4.8A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Ordering information GM4953 Lead Pb -free GM4953

JMTP4953B Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -20V, I = -4A PWM Applications DS D R

JMTP4953A Description JMT Dual P-channel Enhancement Mode Power MosFET Features Applications -30V, -5.1A Load Switch RDS(ON)

JSM4953 Dual P-Channel -30V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOP-8 D2 D2 0.059 @-10V . D1 -30V -5.3A D1 0.089 @-4.5V G2 G S2 G1 S S S1 SO-8 S Pin 1 Equivalent Cir cuit D1 D2 General FEATURE TrenchFET Power MOSFET Lead free product is acquired Surface mount package G1 G2 S1 S2 MARKING APPLICATION Load Switch for Portable Devices 4953 DC/DC Conv

Preliminary Datasheet LPM4953 Dual P -Channel Enhancement Power MOSFET General Description Features The LPM4953 integrates two P-Channel enhancement Trench Technology MOSFET Transistor. It uses advanced trench PMOS V =-15V DS technology and design to provide excellent R R

PT4953 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.5A = 63m RDS(ON), Vgs@-4.5V, Ids@-3.6A = 90m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM Package Dimensions D1 D1 D2 D2 8 7 6 5 1 2 3 4 S1 G1 S2 G2 Millimeter Millimeter REF. REF. Min. Max. Min. Max. A

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8L Dual 20V P-Channel PowerTrench MOSFET 4953B Dual P-Channel 20-V(D-S) MOSFET 4953B V(BR)DSS RDS(on)MAX ID SO-8L D2 D2 0.070 @-4.5V D1 -20V -5.0A D1 0.110 @-2.5V G2 G S2 G1 S S S1 SO-8 S Pin 1 Equivalent Cir cuit General FEATURE 5 4 TrenchFET Power MOSFET Q1 6 3 Lead free product is acquired 7 2 Q2 S

WSP4953A Dual P-Ch MOSFET General Description Product Summery The WSP4953A is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -20V 40m -5.8A gate charge for most of the synchronous buck converter applications . Applications The WSP4953A meet the RoHS and Green Product requirement with full fu

WSP4953 Dual P-Ch MOSFET General Description Product Summery The WSP4953 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent -30V 60m -5.3A RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4953 meet the RoHS and Green Product requirement with full functi

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE4953 P-Channel Enhancement-Mode MOSFET Revision A Features VDS = -30V,ID = -4.9A RDS(ON)

SM4953 Dual P-Channel Enhancement Mode MOSFET Description The SM4953 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. SOIC-8 General Features Ordering Information Ordering Number Pin Assignment Package Packi

GT4953 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View

SI4953ADY-T1-E3 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5

KD4953 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View

NCE4953 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View

AP4953M www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View

SDM4953A www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vie

VBZA4953A www.VBsemi.com Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.040 at VGS = - 10 V - 6 100 % UIS Tested RoHS - 30 15 nC COMPLIANT 0.048 at VGS = - 4.5 V - 5 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S1 S2 - Game Stations S1 1 D1 8 G1 2

SM4953KC www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vie

VBZA4953 www.VBsemi.com Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vi

AP4953GM www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vie

SI4953DY-T1-E3 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 T

APM4953KC www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vi

HM4953C Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953C uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -27V,ID = -5A RDS(ON)

HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -5A RDS(ON)

HM4953 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1 D2 The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2 Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

HM4953A Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1 D2 The HM4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2 Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4953 DESCRIPTION Silicon NPN triple diffusion planar type High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high breakdown voltage high speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

AP4953B -20V P+P-Channel Enhancement Mode MOSFET Description The AP4953B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-6.5A DS D R

AP4953A -30V P+P-Channel Enhancement Mode MOSFET Description The AP4953A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-7A DS D R