9435 - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 9435 P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-5.3A, RDS(ON) = 60m (typ.) @ VGS = -10V S 1 8 D RDS(ON) = 90m (typ.) @ VGS = -4.5V S 2 7 D Super High Density Cell Design S 3 6 D Reliable and Rugged G 45 D SO-8 Package SO - 8 Ap

GOFORD 9435 D DESCRIPTION The 9435 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @ -4.5V -10V (Typ) m m -30V 73 48 -5.1 A High Power a

Plastic-Encapsulate Mosfets P-Channel Enhancement Mode Power MOSFET DESCRIPTION 9435 The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 9435 P-Channel Enhancement Mode Power MOSFET SOP-8 Description SD 1 8 The 9435 uses advanced trench technology to provide S D 2 7 excellent RDS(ON), low gate charge and operation with gate SD 3 6 G D 4 5 voltages as low as 4.5V. Top View Equivalent Cir cuit General Features S VDS

Order this document MOTOROLA by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA MMJT9435 Preliminary Data Sheet Motorola Preferred Device Bipolar Power Transistors PNP Silicon Collector Emitter Sustaining Voltage VCEO(sus) POWER BJT = 30 Vdc (Min) @ IC = 10 mAdc IC = 3.0 AMPERES High DC Current Gain hFE BVCEO = 30 VOLTS = 140 (Min) @ IC = 1.2 Adc VCE(sat) = 0.275 VOLTS

October 2001 FDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5.3 A, 30 V R = 50 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 80 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave

January 2002 NDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5.3 A, 30 V RDS(ON) = 50 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 80 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide rang

DMJT9435 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Ideally Suited for Automated Assembly Processes Case SOT-223 Low Collector-Emitter Saturation Voltage Case Material Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power

DI9435 SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability SO-8 A Fast Switching Speed Dim Min Max High Transient Tolerance 8 7 6 5 A 3.94 4.19 B 3.20 3.40 TOP H B VIEW C 0.381 0.495 D 2.67 3.05 1 2 3 4 E 0.89 1.02 G C G 0.527 0.679 E J 0.41 Nominal J D K 0.

FDS9435A 30V P-Channel PowerTrench Features MOSFET 5.3 A, 30 V R = 50 m @ V = 10 V DS(ON) GS General Description R = 80 m @ V = 4.5 V DS(ON) GS This P-Channel MOSFET is a rugged gate version of ON Low gate charge Semiconductor s advanced PowerTrench process. It has been optimized for power management applications requiring Fast switching speed

NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon http //onsemi.com Features Collector -Emitter Sustaining Voltage - POWER BJT VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc IC = 3.0 AMPERES High DC Current Gain - BVCEO = 30 VOLTS hFE = 125 (Min) @ IC = 0.8 Adc VCE(sat) = 0.275 VOLTS = 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltag

NSB9435T1G High Current Bias Resistor Transistor PNP Silicon Features http //onsemi.com Collector -Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc POWER BJT High DC Current Gain - IC = 3.0 AMPERES hFE = 125 (Min) @ IC = 0.8 Adc BVCEO = 30 VOLTS = 90 (Min) @ IC = 3.0 Adc VCE(sat) = 0.275 VOLTS Low Collector -Emitter Saturation Voltage - VCE(sat

NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon http //onsemi.com Features Collector -Emitter Sustaining Voltage - POWER BJT VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc IC = 3.0 AMPERES High DC Current Gain - BVCEO = 30 VOLTS hFE = 125 (Min) @ IC = 0.8 Adc VCE(sat) = 0.275 VOLTS = 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltag

MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features Pb-Free Packages are Available http //onsemi.com Collector -Emitter Sustaining Voltage - POWER BJT VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc IC = 3.0 AMPERES High DC Current Gain - hFE = 125 (Min) @ IC = 0.8 Adc BVCEO = 30 VOLTS = 90 (Min) @ IC = 3.0 Adc VCE(sat) = 0.275 VOLTS Low Collector

NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon http //onsemi.com Features Collector -Emitter Sustaining Voltage - POWER BJT VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc IC = 3.0 AMPERES High DC Current Gain - BVCEO = 30 VOLTS hFE = 125 (Min) @ IC = 0.8 Adc VCE(sat) = 0.275 VOLTS = 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltag

UNISONIC TECHNOLOGIES CO., LTD UT9435H Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT9435H provide excellent RDS(ON), low gate charge and fast switching speed. It has been optimized for power management applications. SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6 7 8 UT9435HL-AA

UNISONIC TECHNOLOGIES CO., LTD UT9435HZ Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT9435HZ is a P-channel enhancement power MOSFET. It has low gate charge, fast switching speed and perfect RDS(ON). This device is generally applied in power management applications. SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing L

UNISONIC TECHNOLOGIES CO., LTD UT9435H Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT9435H provide excellent RDS(ON), low gate charge and fast switching speed. It has been optimized for power management applications. SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6 7 8 UT9435HL-AA3-R UT9

UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC

SID9435 -20A, -30V,RDS(ON)50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-251 Description 2.3 0.1 6.6 0.2 5.3 0.2 0.5 0.05 The SID9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. 7.0 0.2 5.6 0.2 The TO-251 is univ

SSG9435 P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS(ON) 55 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The SSG9435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all

SSD9435 -20A, -30V,RDS(ON)50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description TO-252 The SSD9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-252 is universally used for commercial-industrial applications. Features * Lo

SSG9435BDY -5.3 A, -30 V, RDS(ON) 36 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free SOP-8 DESCRIPTION The SSG9435BDY provide the designer with the best combination of fast switching, ruggedized device design, B low on-resistance and cost-effectiveness. The SOP-8 package is

SSG9435P -6.5 A, -30 V, RDS(ON) 49 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applicat

TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m ) ID (A) 3. Source 60 @ VGS = 10V -5.3 4. Gate -30 5, 6, 7, 8. Drain 90 @ VGS = 4.5V -4.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Swit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ9435 P-Channel Power MOSFET I D V (BR)DSS R DS(on) MAX SOP8 60 m @-10V -30V -5.1A m 70 @-6V 105m @-4.5V DESCRIPTION The CJQ9435 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This de

CET9435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.3A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain

CEM9435 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 95m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless o

WTK9435 Surface Mount P-Channel Enhancement Mode MOSFET DRAIN CURRENT P b Lead(Pb)-Free -5.3 AMPERES DRAIN SOURCE VOLTAGE Features -30 VOLTAGE * Super high dense * Cell design for low RDS(ON) * R

WTC9435 3 DRAIN P-Channel Enhancement DRAIN CURRENT Mode Power MOSFET -5.3 AMPERES P b Lead(Pb)-Free 1 DRAIN SOURCE VOLTAGE -30 VOLTAGE GATE 2 Features SOURCE * Super High Dense Cell Design For Low RDS(on) RDS(on)

WTD9435 Surface Mount P-Channel Enhancement DRAIN CURRENT Mode POWER MOSFET 3 DRAIN -20 AMPERES P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE Features 2 *Super High Dense Cell Design For Low RDS(ON) SOURCE RDS(ON)

WTN9435 Surface Mount P-Channel DRAIN CURRENT Enhancement Mode Power MOSFET -6.0 AMPERES 2,4 DRAIN DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free -30 VOLTAGE 1 GATE 4 1. GATE 2. DRAIN Features 1 3. SOURCE 3 2 SOURCE 4. DRAIN 3 * Super high dense cell design for low RDS(ON) RDS(ON)

FM120-M WILLAS THRU SE9435LT1 30V P-Channel Enhancement-Mode MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

WPM9435 WPM9435 P-Channel Enhancement Mode MOSFET www.willsemi.com Description The WPM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteb

Spec. No. MOS200509(#) HI-SINCERITY Issued Date 2005.10.01 Revised Date 2010.07.08 MICROELECTRONICS CORP. Page No. 1/5 H9435S/H9435DS 8-Lead Plastic SO-8 Package Code S P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) H9435S Symbol & Pin Assignment Features 5 4 6 3 Pin 1 / 2 / 3 Source Pin 4 Gate 7 2 RDS(on)=60m @VGS=-10V, ID=-5.3A Pin 5 / 6

AP9435GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low Gate Charge RDS(ON) 50m D Fast Switching ID -5.3A G S RoHS Compliant S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

AP9435GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 20A G S Description G D Advanced Power MOSFETs utilized advanced processing techniques to S TO-252(H) achieve the lowest possible on-resistance, extremely efficient and cost-

AP9435GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID - 15A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

AP9435GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low Gate Charge RDS(ON) 50m D Fast Switching ID -5.3A G S S S SO-8 Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on

AP9435GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID -6A S D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchi

AP9435GP RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 15A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti

AP9435GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID - 20A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to G D S TO-252(H) achieve the lowest poss

AP9435GG-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Fast Switching Characteristic RDS(ON) 50m Single Drive Requirement ID - 4.2A G RoHS Compliant & Halogen-Free S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

Analog Power AM9435P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 49 @ VGS = -10V -6.5 Low thermal impedance -30 75 @ VGS = -4.5V -5.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

AFP9435WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=78m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

AFP9435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=76m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

Spec. No. C386Q8 Issued Date 2007.06.08 CYStech Electronics Corp. Revised Date 2012.03.26 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP9435BDYQ8 ID -8.4A 22m (typ.) RDSON(MAX)@VGS=-10V, ID=-7A 35m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MTP9435BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

Spec. No. C809J3 Issued Date 2008.06.12 CYStech Electronics Corp. Revised Date 2014.03.25 Page 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB9435J3 Features Low VCE(sat) Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline TO-252 BTB9435J3 (DPAK) B Base B C E C Collector E Emitter O

Spec. No. C400L3 Issued Date 2009.06.22 CYStech Electronics Corp. Revised Date Page No. 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP9435L3 RDSON(MAX) 60m ID -6A Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating package Symbol Outline SOT-223 MTP9435L3 D S G Gate

Spec. No. C426Q8 Issued Date 2006.03.31 CYStech Electronics Corp. Revised Date 2013.03.01 Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP9435Q8 ID -5.6A RDSON@VGS=-10V, ID=-5.3A 50m (typ) RDSON@VGS=-4.5V, ID=-4.2A 75m (typ) Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plat

Spec. No. C386Q8 Issued Date 2007.06.08 CYStech Electronics Corp. Revised Date 2012.03.26 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9435BDYAQ8 BVDSS -30V ID -8.4A 23m (typ.) RDSON(MAX)@VGS=-10V, ID=-7A 38m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MTP9435BDYAQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

Spec. No. C809L3 CYStech Electronics Corp. Issued Date 2009.01.16 Revised Date Page 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB9435L3 Features Low VCE(sat) Excellent current gain characteristics RoHS compliant package Symbol Outline BTB9435L3 SOT-223 C E C B Base B C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) P

APM9435 P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4.6A, RDS(ON) = 52m (typ.) @ VGS = -10V S 1 8 D RDS(ON) = 80m (typ.) @ VGS = -4.5V S 2 7 D Super High Density Cell Design S 3 6 D Reliable and Rugged G 45 D SO-8 Package SO - 8 Applications S S S Power Management in Noteboo

APM9435K P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-4.6A , D D RDS(ON)=52m (typ.) @ VGS=-10V RDS(ON)=80m (typ.) @ VGS=-4.5V S S Super High Dense Cell Design S G Reliable and Rugged Top View of SOP - 8 Lead Free and Green Devices Available (RoHS Compliant) ( 1, 2, 3 ) S S S Applications (4) Power Management in Notebook Computer,

Green Product S T M9435 S amHop Microelectronics C orp. S ep,23,2014 Ver 1.1 P-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y FEATURES S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m ) Max R ugged and reliable. 55 @ V GS = -10V -30V -4.8A S urface Mount Package. 85 @ V GS = -4.5V D 5 4 G 6 3 D S 7 2 D S SO-8 D 8 1 S 1

SSF9435 D DESCRIPTION The SSF9435 uses advanced trench technology to G provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -5.3A RDS(ON)

BRCS9435SC Rev. I Jan.-2019 DATA SHEET / Descriptions SOP-8 P Power Trench MOS P-Channel Power Trench MOSFET in a SOP-8 Plastic Package. / Features RDS ON Low gate charge, Fast switching speed, High

ST 2SB9435U PNP Silicon Epitaxial Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 45 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 3 A Peak Collector Current -ICM 5 A Base Current -IB 1 A 1) Total Power Dissipation at Ta = 25 Ptot 0.72 W Total Power Dissipation at Tc =

LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A = 60m LP9435LT1G RDS(ON), Vgs@-4.5V, Ids@-4.2A = 90m 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance SOT 23 (TO 236AB) Improved Shoot-Through FOM D Simple Drive Requirement Small Pack

SM9435PSK P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-5.4A , D D RDS(ON)=58m (max.) @ VGS=-10V RDS(ON)=86m (max.) @ VGS=-4.5V S S 100% UIS Tested S G Reliable and Rugged Top View of SOP - 8 Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) DDDD ESD Protection Applications (4) G Power Management in Notebook Comp

SEMICONDUCTOR FTK9435 TECHNICAL DATA D DESCRIPTION The FTK9435 uses advanced trench technology to G provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -5.3A RDS(ON)

SMD Type MOSFET P-Channel MOSFET SI9435DY SOP-8 Features VDS (V) =-30V ID =-5.3 A (VGS =-10V) 1.50 0.15 RDS(ON) 50m (VGS =-10V) RDS(ON) 80m (VGS =-4.5V) Fast switching speed 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate 5 4 6 3 7 2 8 1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-

SMD Type MOSFET P-Channel MOSFET APM9435K (APM9435KC) SOP-8 Features VDS (V) =-30V ID =-4.6 A (VGS =-10V) 1.50 0.15 RDS(ON) 52m (VGS =-10V) RDS(ON) 80m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 4 7 Drain 3 Source G 8 Drain 4 Gate 5 1 6 2 7 3 8 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Vo

SMD Type MOSFET P-Channel Enhancement MOSFET KX9435 Features VDS (V) =-30V 1.70 0.1 ID =-4.2 A (VGS =-10V) RDS(ON) 55m (VGS =-10V) RDS(ON) 90m (VGS =-4.5 V) Low Gate Charge D 0.42 0.1 0.46 0.1 Fast Switching Characteristic 1.Gate G 2.Drain S 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sou

SMD Type MOSFET P-Channel MOSFET KI9435DY SOP-8 Features VDS (V) =-30V ID =-5.3 A (VGS =-10V) 1.50 0.15 RDS(ON) 58m (VGS =-10V) RDS(ON) 89m (VGS =-4.5V) Fast switching speed 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate 5 4 6 3 7 2 8 1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain

SMD Type IC SMD Type MOSFET P-Channel Enhancement MOSFET SI9435BDY (KI9435BDY) SOP-8 Features VDSS = -30V ID = -5.7A (VGS = -10V) RDS(ON) = 42 m @ VGS = -10 V 1.50 0.15 RDS(ON) = 70 m @ VGS = -4.5 V S S D 1 8 G S D 2 7 S D 3 6 G D 4 5 D P-Channel MOSFET Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltag

AM9435 AiT Semiconductor Inc. www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM9435 is the P-Channel logic enhancement -30V/-5.8A, R =38m (typ.)@V =-10V DS(ON) GS mode power field effect transistor is produced using -30V/-4.0A, R =60m (typ.)@V =-4.5V DS(ON) GS high cell density, advanced trench technology to Super high density cell desig

AM9435 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The AM9435 is the P-Channel logic enhancement -30V/-5.2A, RDS(ON) 60m @VGS = -10V mode power field effect transistors are produced -30V/-4.0A, RDS(ON) 90m @VGS = -4.5V using high cell density, DMOS trench technology. Super high density cell design for extremely low This high density process

BLM9435 Power MOSFET 1 Description Step-Down Converter The BLM9435 uses advanced trench technology , to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V -30 V DS I -5.1 A D R .TYP 48 m DS(ON)@-10V R .TYP 70 m DS(ON)@-4.5V FEATURES High power and current handi

CHENMKO ENTERPRISE CO.,LTD CHM9435AZGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. (SO-8 ) 1.65+0.15 * High density cell design for extremely low RDS(ON). 6.50+0.20 0.90+0.05 2.0+0

CHENMKO ENTERPRISE CO.,LTD CHM9435GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 FEATURE * Small flat package. (SOT-23) * Advanced trench process technology * High Density Cell Design For Ultra Low On-Resistance (1) (

CHENMKO ENTERPRISE CO.,LTD CHT9435ZGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-73/SOT-223) SC-73/SOT-223 * Low saturation voltage VCE(sat)=-0.275V(max.)(IC=-1.2A) * High speed switching time tstg= 1.0uSec (typ.) 1.65+0.15 * PC= 1.56 W (mounted on ceramic substrate)

CHENMKO ENTERPRISE CO.,LTD CHM9435AJGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and re

GSM9435S P-Channel Enhancement Mode MOSFET Product Description Features GSM9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

GSM9435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=78m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

ME9435AS/ ME9435AS-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 45m @VGS=-10V The ME9435AS is the P-Channel logic enhancement mode power RDS(ON) 60m @VGS=-4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored t

ME9435A/ME9435A-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 40m @VGS=-10V The ME9435A is the P-Channel logic enhancement mode power field RDS(ON) 60m @VGS=-4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to m

ME9435/ ME9435-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 60m @VGS=-10V The ME9435 is the P-Channel logic enhancement mode power field RDS(ON) 90m @VGS=-4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to mini

MMP9435BDY Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P- Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.7A = 42m RDS(ON), Vgs@-4.5V, Ids@-4.4A = 70m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Rating

MMP9435 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A = 60m RDS(ON), Vgs@-4.5V, Ids@-4.2A = 90m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings an

http //www.ncepower.com NCE9435A NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE9435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -5.3A RDS(

Pb Free Product http //www.ncepower.com NCE9435 NCE P-Channel Enhancement Mode Power MOSFET D Description The NCE9435 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID

SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9435GM acheives fast switching performance BVDSS -30V with low gate charge without a complex drive circuit. It RDS(ON) 50m is suitable for low voltage applications such as battery management and general high-side switch circuits. I -5.3A D The SSM9435GM is supplied in an RoHS-compliant Pb-free;

SSM9435K P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV -30V DSS D Low on-resistance R 50m DS(ON) S Fast switching ID -6A D G SOT-223 Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G low on-resistance and cost-effectiveness. S Absolute Maximum Ratings Symbol Parameter Ratin

SSM9435GH,J P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -30V D Simple drive requirement R 50m DS(ON) Fast switching ID -20A G Pb-free; RoHS compliant. S DESCRIPTION G The SSM9435H is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC

SL9435A Product Summary Features Trench Power MV MOSFET technology VDS RDS(ON) MAX ID MAX Excellent package for heat dissipation 60m @10VD2 S1 -30V -5A D1 High density cell design for low RDS(ON) 90m @4.5V D D D D Application DC-DC Converters Power management functions S S S G D D D D SOP-8 top view Schematic diagram 9435A Device code XXXXXX C

STP9435 P Channel Enhancement Mode MOSFET - 5.0A DESCRIPTION STP9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note

ST9435A P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note

ST9435GP P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power

ATM9435PPA P-Channel Enhancement Mode Field Effect Transistor Description SOP-8L D The ATM9435PPA uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as -4.5V. This G device is suitable for use as a load switch or in PWM applications. Standard Product ATM9435PPA is Pb- Pin 1 free. S Top View Schematic Feature

Eternal Semiconductor Inc. ES9435 P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) PRODUCT SUMMARY VDSS ID RDS(on) (m )TYP 50 @ VGS = -10 V, ID=-5.3A -30V -5.3A 70 @ VGS = -4.5V, ID=-4.2A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM

JMTP9435A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -5.1A Load Switch RDS(ON)

JSM9435 P-Channel Enhancement Mode Power MOSFET SOP-8 Description SD 1 8 The 9435 uses advanced trench technology to provide S D 2 7 excellent RDS(ON), low gate charge and operation with gate SD 3 6 G D 4 5 voltages as low as 4.5V. Top View Equivalent Cir cuit General Features S VDS = -30V = -4.2A RDS(ON)

Preliminary Datasheet LPM9435 P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM9435 is the P-channel logic enhancement -30V/-5.8A,R =42m (typ.)@VGS=-10V DS(ON) mode power field effect transistors are produced using -30V/-4.0A,R =65m (typ.)@VGS=-4.5V DS(ON) high cell density, DMOS trench technology. This high Super high density ce

SOP-8 Plastic-Encapsulate MOSFETS SI9435 P-Channel Enhancement Mode Power MOSFET SOP-8 Description SD 1 8 The SI9435 uses advanced trench technology to provide S D 2 7 excellent RDS(ON), low gate charge and operation with gate SD 3 6 G D 4 5 voltages as low as 4.5V. Top View Equivalent Cir cuit General Features S VDS = -30V = -4.2A RDS(ON)

PT9435 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A = 60m RDS(ON), Vgs@-4.5V, Ids@-4.2A = 95m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM Package Dimensions Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 5.80 6.20 M 0.10 0.25 B 4.80 5.00 H 0.31 0

WSP9435 P-Ch MOSFET General Description Product Summery The WSP9435 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 38m -5.4A for most of the synchronous buck converter applications . Applications The WSP9435 meet the RoHS and Green Product requirement , with full function re

SHANGHAI August 2005 MICROELECTRONICS CO., LTD. SE9435 P-Channel Enhancement Mode Power MOSFET General Description Features The MOSFETs from SINO-IC provide the VDS = -30 V best combination of fast switching, low ID = -5.3 A on-resistance and cost-effectiveness. RDS(ON) = 0.050 @VGS = -10V Low gate charge. Fast switching speed. Applications Power management

SM9435 P-Channel Enhancement-Mode MOSFET(-30V, -5.3A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 60 @ VGS = -10 V, ID=-5.3A -30V -5.3A 90 @ VGS = -4.5V, ID=-4.2A Features 1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 Fully Characterized Avalanche Voltage and Current. 4 Improved Shoot-Through FOM. 5 RoHS

UT9435G www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 26 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.046 at VGS = - 4.5 V - 21 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-Cha

AP9435GK www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Load

VBZA9435 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.026at VGS = - 10 V - 6 100 % Rg Tested RoHS - 30 29 nC COMPLIANT 100 % UIS Tested 0.030 at VGS = - 4.5 V - 5 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6

FDS9435A-NL www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D T

APM9435KC www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top

FDS9435 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top V

AP9435K www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Load S

SI9435DY-T1 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D T

SSM9435GM www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top

AP9435GM www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top

SI9435BDY-T1-E3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5

ME9435 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top Vi

SDM9435A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top

NDS9435A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top

AP9435GG www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.056 at VGS = - 4.5 V - 6.0 APPLICATIONS Load Switch Battery Switch D S G G D S D P-Channel MOSFET ABS

AP9435GH www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 26 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.046 at VGS = - 4.5 V - 21 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-Ch

HM9435 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM9435 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

HM9435A P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM9435A uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

HM9435B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM9435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -5A RDS(ON)

AP9435A -30V P-Channel Enhancement Mode MOSFET Description The AP9435A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-6A DS D R