Справочник MOSFET. SSS2N60

 

SSS2N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSS2N60
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
   Тип корпуса: TO220F TO251

 Аналог (замена) для SSS2N60

 

 

SSS2N60 Datasheet (PDF)

 ..1. Size:1620K  shenzhen
 sss2n60.pdf

SSS2N60 SSS2N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS2N602 Amps 600Volts2 Amps 600Volts2 Amps 600Volts2 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS2N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and have a highrug

 ..2. Size:8834K  cn tuofeng
 sss2n60.pdf

SSS2N60 SSS2N60

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTDN-CHANNEL MOSFET SSS2N602 Amps 600Volts2 Amps 600Volts2 Amps 600Volts2 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS2N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and

 0.1. Size:862K  fairchild semi
 ssp2n60b sss2n60b.pdf

SSS2N60 SSS2N60

SSP2N60B/SSS2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored to Fast swit

 0.2. Size:507K  samsung
 sss2n60a.pdf

SSS2N60 SSS2N60

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 9.1. Size:505K  samsung
 sss2n90a.pdf

SSS2N60 SSS2N60

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 7.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 5.838 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 9.2. Size:914K  samsung
 sss2n80a.pdf

SSS2N60 SSS2N60

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

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