G1006A - аналоги, параметры транзистора - Справочник транзисторов

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GOFORD G1006A D Description The G1006A uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. It is ESD protected. It is ESD protected. It is ESD protected. S General Features Schematic diagram VDS = 100V,ID = 6A R

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GOFORD G1006 D Description The G1006 uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 6A m 100V 110 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren

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GOFORD G1006LE N-Channel Trench MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features VDS 100V ID (at VGS = 10V) 3A G1006 RDS(ON) (at VGS = 10V)

Другие MOSFET... 1402TR , 1404TR , 140N10 , ECYA , G1002 , G1002L , G1003A , G1006 , 4435 , G1008 , G2002 , G2003 , G2005 , G2005K , G2009 , G2009K , G20N20 .