G10N10 - описание и поиск аналогов

GOFORD G10N10. Description The G10N10. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram RDS(ON) RDS(ON) VDSS @ @ ID 10V 4.5V (typ) (typ) 100V 14m 15m 10A Marking and pin assignment Special process technology for high ESD cap

GOFORD G10N10A Description The G10N10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram RDS(ON) RDS(ON) VDSS @ @ ID 10V 4.5V (typ) (typ) 100V 16m 18m 10A Marking and pin assignment Special process technology for high ESD cap

TK65G10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK65G10N1 TK65G10N1 TK65G10N1 TK65G10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enha

HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 35A, 1200V, TC = 25oC The HGTG10N120BND is a Non-Punch Through (NPT) 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage switching IGBT famil

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

TSG10N120CN N-Channel IGBT with FRD. TO-3P Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 30 10.5 General Description The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

BRG10N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Lo

Isc N-Channel MOSFET Transistor ITK65G10N1 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo