16N10 - описание и поиск аналогов

GOFORD 16N10 Description The 16N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 15A 100V 67m High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good s

STP16N10L N - CHANNEL 100V - 0.14 - 16A - TO-220 POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP16N10L 100 V

IPG16N10S4L-61A OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max3) 61 mW ID 16 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type

IPG16N10S4-61A OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max3) 61 m ID 16 A Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Typ

Advance Technical Information Depletion Mode VDSX = 100V IXTH16N10D2 MOSFET ID(on) > 16A IXTT16N10D2 RDS(on) 64m N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25 C to 150 C 100 V VDGX TJ = 25 C to 150 C, RGS = 1M 100 V VGSX Continuous 20 V VGSM Transient 30 V TO-268 (IXTT) PD TC = 25 C 695

CEP16N10L/CEB16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MA

CED16N10/CEU16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 120m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

CED16N10L/CEU16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-P

CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

SFF116N10M Solid State Devices, Inc. SFF116N10Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone (562) 404-4474 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 116 AMP , 100 Volts, 15 m Part Number / Ordering Information 1/ Avalanche Rated N-channel SFF116N10 ___ ___ ____ Screening 2/ MOSFET __ = Not Scre

Green Product BLM16N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM16N10 uses advanced trench technology to provide V = 100V,I = 60A DS D excellent R , low gate charge. It can be used in a wide R

Pb Free Product NCEP016N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =385A DS D switching performance. Both conduction and switching power R =1.2m , typical@ V =10V DS(ON) GS losses are minimized due to an extrem

http //www.ncepower.com NCEAP016N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =385A DS D uniquely optimized to provide the most efficient high frequency R =1.2m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate

ST16N10 N Channel Enhancement Mode MOSFET 16.0A DESCRIPTION ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been opt

WMK16N10T1 100V N-Channel Enhancement Mode Power MOSFET Description WMK16N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features S D G V =100V, I = 15.8A DS D TO-220 R

H P16N10,H F16N10 100V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25 unless otherwise noted C, Value Parameter Symbol Unit TO220F TO-220 Drain-Source Voltage (VGS = 0V) V

AGM16N10C General Description Product Summary The AGM16N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 15m 55A Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimi

AGM16N10D General Description Product Summary The AGM16N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 16m 40A Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimi

WSP16N10 N-Ch MOSFET General Description Product Summery The WSP16N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent 100V 8.9m 16A RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSF16N10 meet the RoHS and Green Product requirement , 100% EAS DC/DC