All MOSFET. 16N10 Datasheet

 

16N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: 16N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 6.5 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: TO252

16N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

16N10 Datasheet (PDF)

1.1. sff116n10m sff116n10z.pdf Size:112K _upd-mosfet

16N10
16N10

SFF116N10M Solid State Devices, Inc. SFF116N10Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 116 AMP , 100 Volts, 15 mΩ Part Number / Ordering Information 1/ Avalanche Rated N-channel SFF116N10 ___ ___ ____ │ │ └ Screening 2/ MOSFET │ │ __ = Not Scre

1.2. st16n10.pdf Size:979K _update-mosfet

16N10
16N10

ST16N10 ST16N10 ST16N10 ST16N10 N Channel Enhancement Mode MOSFET 16.0A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous

 1.3. stp16n10l.pdf Size:50K _st

16N10
16N10

STP16N10L N - CHANNEL 100V - 0.14 ? - 16A - TO-220 POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP16N10L 100 V < 0.16 ? 16 A TYPICAL R = 0.14 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 HIGH dV/dt RUGGEDNESS 2 1 APPLICATION ORIENTED CHARACTERIZATION TO-220 APPLICA

1.4. ixth16n10d2 ixtt16n10d2.pdf Size:172K _ixys

16N10
16N10

Advance Technical Information Depletion Mode VDSX = 100V IXTH16N10D2 MOSFET ID(on) > 16A IXTT16N10D2 ≤ Ω RDS(on) ≤ 64mΩ ≤ Ω ≤ Ω ≤ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25°C to 150°C 100 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 100 V VGSX Continuous ±20 V VGSM Transient ±30 V TO-268 (IXTT) PD TC = 25°C 695

 1.5. cep16n10l ceb16n10l.pdf Size:645K _cet

16N10
16N10

CEP16N10L/CEB16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115m? @VGS = 10V. RDS(ON) = 125m? @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM R

1.6. ceu16n10 ced16n10.pdf Size:623K _cet

16N10
16N10

CED16N10/CEU16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 120m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

1.7. ceu16n10l ced16n10l.pdf Size:684K _cet

16N10
16N10

CED16N10L/CEU16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 115m? @VGS = 10V. RDS(ON) = 125m? @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) AB

1.8. cep16n10 ceb16n10.pdf Size:534K _cet

16N10
16N10

CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Par

1.9. 16n10.pdf Size:1601K _goford

16N10
16N10

GOFORD 16N10 Description The 16N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 15A 100V 67mΩ ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good s

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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