All MOSFET. 16N10 Datasheet

 

16N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: 16N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 6.5 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: TO252

16N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

16N10 Datasheet (PDF)

1.1. sff116n10m sff116n10z.pdf Size:112K _upd-mosfet

16N10
16N10

SFF116N10M Solid State Devices, Inc. SFF116N10Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 116 AMP , 100 Volts, 15 mΩ Part Number / Ordering Information 1/ Avalanche Rated N-channel SFF116N10 ___ ___ ____ │ │ └ Screening 2/ MOSFET │ │ __ = Not Scre

1.2. stp16n10l.pdf Size:50K _st

16N10
16N10

STP16N10L N - CHANNEL 100V - 0.14 ? - 16A - TO-220 POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP16N10L 100 V < 0.16 ? 16 A TYPICAL R = 0.14 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 HIGH dV/dt RUGGEDNESS 2 1 APPLICATION ORIENTED CHARACTERIZATION TO-220 APPLICA

 1.3. ixth16n10d2 ixtt16n10d2.pdf Size:172K _ixys

16N10
16N10

Advance Technical Information Depletion Mode VDSX = 100V IXTH16N10D2 MOSFET ID(on) > 16A IXTT16N10D2 ≤ Ω RDS(on) ≤ 64mΩ ≤ Ω ≤ Ω ≤ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25°C to 150°C 100 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 100 V VGSX Continuous ±20 V VGSM Transient ±30 V TO-268 (IXTT) PD TC = 25°C 695

1.4. cep16n10 ceb16n10.pdf Size:534K _cet

16N10
16N10

CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Par

 1.5. cep16n10l ceb16n10l.pdf Size:645K _cet

16N10
16N10

CEP16N10L/CEB16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115m? @VGS = 10V. RDS(ON) = 125m? @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM R

1.6. ceu16n10l ced16n10l.pdf Size:684K _cet

16N10
16N10

CED16N10L/CEU16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 115m? @VGS = 10V. RDS(ON) = 125m? @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) AB

1.7. ceu16n10 ced16n10.pdf Size:623K _cet

16N10
16N10

CED16N10/CEU16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 120m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

1.8. 16n10.pdf Size:1601K _goford

16N10
16N10

GOFORD 16N10 Description The 16N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 15A 100V 67mΩ ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good s

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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