25P10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 25P10
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 790 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: TO251
25P10 Datasheet (PDF)
25p10.pdf
GOFORD25P10Description The 25P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ)-10V m -25A-100V 42 Super high dense cell design Advanced trench process technology Reliable and rugged High den
sup25p10-138.pdf
SUP25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization:0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100www.vishay.com/doc?999120.142 at VGS = - 6 V - 16.
sum25p10-138.pdf
SUM25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization:0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100www.vishay.com/doc?999120.142 at VGS = - 6 V - 16.
utt25p10l-ta3-t utt25p10g-ta3-t utt25p10l-tf3-t utt25p10g-tf3-t utt25p10l-tn3-r utt25p10g-tn3-r utt25p10l-tq2-t utt25p10g-tq2-t utt25p10l-tq2-r utt25p10g-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customerswith high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor drivers,switc
utt25p10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT25P10 Power MOSFET Preliminary 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor d
25p10g.pdf
GOFORD25N10GDescription The 25P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ)-10V m -25A-100V 42 Super high dense cell design Advanced trench process technology Reliable and rugged High de
utt25p10l.pdf
UTT25P10Lwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Switc
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918