25P10 - описание и поиск аналогов

GOFORD 25P10 Description The 25P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -10V m -25A -100V 42 Super high dense cell design Advanced trench process technology Reliable and rugged High den

SUP25P10-138 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)c Qg (Typ.) 100 % Rg and UIS Tested 0.138 at VGS = - 10 V - 16.3 Material categorization 0.141 at VGS = - 7.5 V - 16.1 24 nC For definitions of compliance please see - 100 www.vishay.com/doc?99912 0.142 at VGS = - 6 V - 16.

SUM25P10-138 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)c Qg (Typ.) 100 % Rg and UIS Tested 0.138 at VGS = - 10 V - 16.3 Material categorization 0.141 at VGS = - 7.5 V - 16.1 24 nC For definitions of compliance please see - 100 www.vishay.com/doc?99912 0.142 at VGS = - 6 V - 16.

UNISONIC TECHNOLOGIES CO., LTD UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor drivers, switc

UNISONIC TECHNOLOGIES CO., LTD UTT25P10 Power MOSFET Preliminary 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor d

GOFORD 25N10G Description The 25P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -10V m -25A -100V 42 Super high dense cell design Advanced trench process technology Reliable and rugged High de

UTT25P10L www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.167 at VGS = - 10 V - 18 - 100 37 100 % Rg and UIS Tested 0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Power Switc