All MOSFET. 25P10 Datasheet

 

25P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: 25P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 790 pF

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: TO251

25P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

25P10 Datasheet (PDF)

1.1. sum25p10-138.pdf Size:158K _update_mosfet

25P10
25P10

SUM25P10-138 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () Max. ID (A)c Qg (Typ.) • 100 % Rg and UIS Tested 0.138 at VGS = - 10 V - 16.3 • Material categorization: 0.141 at VGS = - 7.5 V - 16.1 24 nC For definitions of compliance please see - 100 www.vishay.com/doc?99912 0.142 at VGS = - 6 V - 16.

1.2. sup25p10-138.pdf Size:128K _update_mosfet

25P10
25P10

SUP25P10-138 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () Max. ID (A)c Qg (Typ.) • 100 % Rg and UIS Tested 0.138 at VGS = - 10 V - 16.3 • Material categorization: 0.141 at VGS = - 7.5 V - 16.1 24 nC For definitions of compliance please see - 100 www.vishay.com/doc?99912 0.142 at VGS = - 6 V - 16.

 1.3. utt25p10.pdf Size:163K _utc

25P10
25P10

UNISONIC TECHNOLOGIES CO., LTD UTT25P10 Power MOSFET Preliminary 25A, 100V P-CHANNEL POWER MOSFET ? DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor driver

1.4. 25p10g.pdf Size:1652K _goford

25P10
25P10

GOFORD 25N10G Description The 25P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -10V mΩ -25A -100V 42 ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High de

 1.5. 25p10.pdf Size:1819K _goford

25P10
25P10

GOFORD 25P10 Description The 25P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -10V mΩ -25A -100V 42 ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High den

Datasheet: 18N10 , 2002A , 20P10 , 21N06 , 22N10 , 2301H , 2301L , 25P06 , 2N3824 , 25P10G , 28N10 , 28P55 , 30P10A , 30P55 , 3205PL , 3205TR , 3400L .

 
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