GOFORD80N03DESCRIPTIONThe 80N03 uses advanced trench technologyVDS RDS(ON) IDAnd design to provide excellent RDS (ON ) with30V -- 80ALow gate charge . It can be used in a wideVanety of applications .GENERAL FEATURES VDS = 30 V, ID = 80 ATO-252-2L top view RDS(ON)

GOFORD80N03Features Pin DescriptionVDSS RDS(ON) RDS(ON) ID @4.5V (Max) @10V (Max) DDDD30V3.9m 2.5m 80AGPin 1SS Reliable and Rugged SDFN5x6-8 Lower Qg and Qgd for high-speed switching(5,6,7,8) Lower RDS(ON) to Minimize Conduction LossesDDDD Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications Power Management in

www.msksemi.comMSK80N03NFSemiconductorCompianceDescriptionThe uses advanced trench technologyMSK80N03NFand design to provide excellent RDS(ON) with low D D D Dgatecharge. It can be used in a wide variety of applications.General FeaturesVDS=30V,ID=80AS S S GRDS(ON)

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC80N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 3.0m@10V30 V80A4.3m@4.5VDESCRIPTION The CJAC80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

STP80N03L-06N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORTENTATIVE DATA TYPE V R IDSS DS(on) DSTP80N03L-06 30 V

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data Sheet4.5V Drive Nch MOSFETRMW180N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETPSOP8(8) (7) (6) (5)Features0~0.11) High Power package(PSOP8).2) High-speed switching,Low On-resistance.1pin mark(1) (2) (3) (4)0.220.43) Low voltage drive(4.5V drive).0.91.275.0 ApplicationSwitching Packaging specifications Inner circuit

Data Sheet4.5V Drive Nch MOSFETRMW280N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET PSOP8(8) (7) (6) (5)Features0~0.11) High Power package(PSOP8).1pin mark2) High-speed switching,Low On-resistance. (1) (2) (3) (4)0.220.40.93) Low voltage drive(4.5V drive).1.275.0 ApplicationSwitching Packaging specifications Inner circuit

BSC080N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 8 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 10.2 100% avalanche testedID 53 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

IPB180N03S4L-H0OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 0.95mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N03S4L-H0 PG-TO263-7-3 4N

Type IPP080N03L GIPB080N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 8.0mWDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

IPB80N03S4L-03IPI80N03S4L-04, IPP80N03S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 3.3mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low

www.DataSheet4U.com SPI80N03S2-03SPP80N03S2-03,SPB80N03S2-03OptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 3.1 m Enhancement modeID 80 A Excellent Gate Charge x RDS(on) product (FOM)P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Superior thermal resistance 175C operating temperature Avalanche rated

Type IPP080N03L GIPB080N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 8.0mWDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

IPB80N03S4L-02IPI80N03S4L-03, IPP80N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 2.4mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low

% ! % D %0S 07DK >AI A@ D7E;EF3@57 0D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n)1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB7D;AD F:7D?3

Type IPP080N03L GIPB080N03L GOptiMOS3 Power-TransistorProduct SummaryFeatures .V 30 VDS Fast switching MOSFET for SMPSR 8.0mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R

IPB80N03S4L-02IPI80N03S4L-03, IPP80N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 2.4mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low

BSC080N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 8 mW Optimized technology for DC/DC convertersID 53 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

SPI80N03S2-03SPP80N03S2-03,SPB80N03S2-03OptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 3.1 m Enhancement modeID 80 A Excellent Gate Charge x RDS(on) product (FOM)P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt ratedType Pa

BSC080N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 8 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 10.2 100% avalanche testedID 53 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

BSC080N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 8 mW Optimized technology for DC/DC convertersID 53 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

& " & E $;B1= !#& '$=;0@/? &@99-=DFeatures D Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"- 4

IPB180N03S4L-01OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 1.05mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N03S4L-01 PG-TO263-7-3 4N

SSD80N03 80A , 30V , RDS(ON) 5.5m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) The SSD80N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter

SPR80N03 80A , 30V , RDS(ON) 5.5 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION PR-8PP The SPR80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU80N03 N-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX TO-252-2L 6.5m@10V 80A30V 10m@ 5 V 1. GATE DESCRIPTION 2. DRAIN The CJU80N03 uses advanced trench technology and design 3. SOURCE to provide excellent RDS(ON) with low gate charge. It can be used in a wide varie

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC80N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 3.0m@10V30 V80A4.3m@4.5VDESCRIPTION The CJAC80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

AP80N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP80N03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the low

Analog Power AM80N03-06DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 5.8 @ VGS = 10V 76dissipation. Typical applications are DC-DC 30converters and power management in portable and 9 @ VGS = 4.5V 61batte

Analog Power AM80N03-05DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 4.8 @ VGS = 10V 84dissipation. Typical applications are DC-DC 30converters and power management in portable and 7 @ VGS = 4.5V 70batte

BRCS080N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =30 A (VGS = 20V) RDS(ON)@10V9mR(Typ.8mR) HFProduct. / Applications DC/DC

BRCS080N03DSC Rev.A Aug.-2023 DATA SHEET / Descriptions SOP-8 N MOS Double N-CHANNEL MOSFET in a SOP-8 Plastic Package. / Features V (V)=30V I =16A DS DRDS(ON)@10V

BRCS80N03DP Rev.D Mar.-2020 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Super high dense cell design for low RDS(on),Rugged and reliable,surface mount package. Halogen-free Product. / Applicati

SEMICONDUCTORFTK80N03DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK80N03D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

DHD80N0340A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.2mDS(on) (TYP)standard.13 SI Silicon limit= 76AD2 FeaturesI Package limit 40A=D Low on resis

Bruckewell Technology Corp., Ltd. MSD80N03 N-Channel Enhancement Mode Power MOSFET FEATURES 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package & Halogen-free package Absolute Maximum Ratings (Tc=25C unless otherwise noted) Pa

SL80N03N-Channel Enhancement Mode Field Effect TransistorProduct Summary V 30V DSI 80A DR ( at V = 10V) 6.5mohm DS(ON) GSR ( at V = 5V) 10mohm DS(ON) GSFeatures High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissi

WMQ080N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description DDDDDDD DWMQ080N03LG2 uses Wayon's 2nd generation power trench SGSMOSFET technology that has been especially tailored to minimize the SSSGSon-state resistance and yet maintain superior switching performance. PDFN3030-8LThis device is well suited for high efficiency fast switching appl

WMO80N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = 30V, I = 80A DS DR

WMM180N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMM180N03TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. STO-263Features V = 30V, I = 180A DS DR

WMB080N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB080N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5

WMK180N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMK180N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features SDG V = 30V, I = 180A DS DTO-220R

WMQ80N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ80N03T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 80A DS DR

FIR80N03LG80A,30V N-CHANNEL MOSFET-EPIN Connection TO-252(D-PAK)DESCRIPTION DThe is an N-channel enhancement mode power MOS FIR80N03LGfield effect transistor which is produced using Silan's LVMOS Gtechnology. The improved process and cell structure have been Sespecially tailored to minimize on-state resistance, provide superior switching performance. This device is w

HSU80N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSU80N03 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),TYP 4.9 m gate charge for most of the synchronous buck converter applications. ID 80 A The HSU80N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

VBZQA80N03www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.003 at VGS = 10 V 120APPLICATIONS30 71 nC0.005 at VGS = 4.5 V 90 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFET

VBZL80N03www.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY 175 C Junction Temperature200VDS V Low Thermal Resistance PackageRDS(on) VGS = 10 V 48 m PWM Optimized for Fast SwitchingID 40A Compliant to RoHS Directive 2002/95/ECConfiguration SingleAPPLICATIONS Isolated DC/DC Converters- Primary-Si

VBZM80N03www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0038 AEC-Q101 QualifieddID (A) a 180 100 % Rg and UIS TestedConfiguration SingleDTO-220GTop ViewSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other

SPP80N03S2Lwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop View

VBZFB80N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS 30V Halogen-free6RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFETRDS(on) VGS = 4.5 V 8m 100 % Rg TestedRoHSID 70ACOMPLIANT 100 % UIS TestedConfiguration SingleAPPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D S

VBZE80N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007at VGS = 10 V 8533 nC300.011 at VGS = 4.5 V 50APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO

RoHS COMPLIANT YJD80N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 80A D R ( at V =10V) 4.5mohm DS(ON) GS R ( at V =4.5V) 6.0mohm DS(ON) GS 100% UIS Tested 100% V Tested DSGeneral Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell

RoHS COMPLIANT YJD80N03B N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 80A D R ( at V =10V) 5.5 mohm DS(ON) GS R ( at V =4.5V) 8.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cel

HM80N03IN-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

HM80N03N-Channel Enhancement Mode Power MOSFET Description The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

HM80N03KAN-Channel Enhancement Mode Power MOSFET Description The HM80N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

HM80N03AN-Channel Enhancement Mode Power MOSFET Description The HM80N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

isc N-Channel MOSFET Transistor IPB080N03LDESCRIPTIONDrain Current :I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP080N03LIIPP080N03LFEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement mode:Vth =1.0 to 2.2V (VDS = 0 V, ID=250A)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a