Справочник MOSFET. IRF614

 

IRF614 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF614
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 36 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7.6 ns
   Cossⓘ - Выходная емкость: 42 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRF614

 

 

IRF614 Datasheet (PDF)

 ..1. Size:295K  1
 irf614 irf615.pdf

IRF614 IRF614

 ..2. Size:134K  international rectifier
 irf614pbf.pdf

IRF614 IRF614

IRF614, SiHF614Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Fast SwitchingQg (Max.) (nC) 8.2 COMPLIANT Ease of ParallelingQgs (nC) 1.8 Simple Drive RequirementsQgd (nC) 4.5Configuration Single Compliant to RoHS Directive 2002/95/ECDD

 ..3. Size:919K  international rectifier
 irf614.pdf

IRF614 IRF614

PD - 94849IRF614PbF Lead-Free11/25/06Document Number: 91025 www.vishay.com1IRF614PbFDocument Number: 91025 www.vishay.com2IRF614PbFDocument Number: 91025 www.vishay.com3IRF614PbFDocument Number: 91025 www.vishay.com4IRF614PbFDocument Number: 91025 www.vishay.com5IRF614PbFDocument Number: 91025 www.vishay.com6IRF614PbFTO-220AB Package Outline

 ..4. Size:133K  vishay
 irf614 sihf614.pdf

IRF614 IRF614

IRF614, SiHF614Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Fast SwitchingQg (Max.) (nC) 8.2 COMPLIANT Ease of ParallelingQgs (nC) 1.8 Simple Drive RequirementsQgd (nC) 4.5Configuration Single Compliant to RoHS Directive 2002/95/ECDD

 0.1. Size:174K  international rectifier
 irf614s.pdf

IRF614 IRF614

 0.2. Size:197K  international rectifier
 irf614spbf.pdf

IRF614 IRF614

IRF614S, SiHF614SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 250 Definition Surface MountRDS(on) ()VGS = 10 V 2.0 Available in Tape and Reel Qg (Max.) (nC) 8.2 Dynamic dV/dt RatingQgs (nC) 1.8 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Sin

 0.3. Size:855K  fairchild semi
 irf614b.pdf

IRF614 IRF614

November 2001IRF614B/IRFS614B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored to

 0.4. Size:945K  samsung
 irf614a.pdf

IRF614 IRF614

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 10 (Max.) @ VDS = 250V Lower RDS(ON) : 1.393 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

Другие MOSFET... IRF543 , IRF550A , IRF610 , IRF610A , IRF610S , IRF611 , IRF612 , IRF613 , SPP20N60C3 , IRF614A , IRF614S , IRF615 , IRF620 , IRF620A , IRF620FI , IRF620S , IRF621 .

History: 2SK2480 | STWA48N60M2 | PMV65UN

 

 
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