IRF614 datasheet, подбор замены

 ..1. Size:295K  1
 irf614 irf615.pdf 

 ..2. Size:134K  international rectifier
 irf614pbf.pdf 

IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT Ease of Paralleling Qgs (nC) 1.8 Simple Drive Requirements Qgd (nC) 4.5 Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 ..3. Size:919K  international rectifier
 irf614.pdf 

PD - 94849 IRF614PbF Lead-Free 11/25/06 Document Number 91025 www.vishay.com 1 IRF614PbF Document Number 91025 www.vishay.com 2 IRF614PbF Document Number 91025 www.vishay.com 3 IRF614PbF Document Number 91025 www.vishay.com 4 IRF614PbF Document Number 91025 www.vishay.com 5 IRF614PbF Document Number 91025 www.vishay.com 6 IRF614PbF TO-220AB Package Outline

 ..4. Size:133K  vishay
 irf614 sihf614.pdf 

IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT Ease of Paralleling Qgs (nC) 1.8 Simple Drive Requirements Qgd (nC) 4.5 Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 0.1. Size:174K  international rectifier
 irf614s.pdf 

 0.2. Size:197K  international rectifier
 irf614spbf.pdf 

IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition Surface Mount RDS(on) ( )VGS = 10 V 2.0 Available in Tape and Reel Qg (Max.) (nC) 8.2 Dynamic dV/dt Rating Qgs (nC) 1.8 Repetitive Avalanche Rated Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Sin

 0.3. Size:855K  fairchild semi
 irf614b.pdf 

November 2001 IRF614B/IRFS614B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to

 0.4. Size:945K  samsung
 irf614a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 10 (Max.) @ VDS = 250V Lower RDS(ON) 1.393 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic